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NVF3055L108T1G

A continuous drain current and 60V source voltage, featuring a SOT-223 package

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Overview of NVF3055L108T1G

The NVF3055L108T1G is an N-channel MOSFET transistor with a low on-resistance and high current capability. This transistor is designed for power switching applications where efficiency and reliability are crucial.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram showing the connections and usage of the NVF3055L108T1G MOSFET for a better understanding of its operation.

Key Features

  • Low On-Resistance: The NVF3055L108T1G offers a low on-resistance to minimize power losses during operation.
  • High Current Capability: With its high current-handling capacity, this MOSFET is suitable for power switching applications.
  • Efficiency: Designed for efficiency in power conversion and other switching tasks.
  • Reliability: Provides reliable performance in demanding environments.
  • Fast Switching Speed: Offers fast switching characteristics for quick response in electronic circuits.

Note: Refer to the NVF3055L108T1G datasheet for detailed technical specifications.

Application

  • Power Electronics: Ideal for use in power supplies, motor control, and other power management applications.
  • Switching Circuits: Suitable for switching applications in various electronic circuits.
  • Inverter Systems: Can be used in inverter systems for converting DC power to AC power efficiently.

Functionality

The NVF3055L108T1G N-channel MOSFET transistor is designed to control power flow in electronic circuits, providing efficient switching and current handling capabilities.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate pin for turning the MOSFET on and off.
  • Drain-Source Connection: Connect the load or circuit between the Drain and Source pins.
  • Source Connection: Connect the Source pin to the ground or common reference point of the circuit.

Frequently Asked Questions

Q: Is the NVF3055L108T1G suitable for high-power applications?
A: Yes, the NVF3055L108T1G is designed for high-power applications due to its low on-resistance and high current capability.

Equivalent

For similar functionalities, consider these alternatives to the NVF3055L108T1G:

  • IRF3205: An N-channel MOSFET with comparable specifications suitable for power electronics applications.
  • BUK9608-55A: This MOSFET offers similar performance characteristics to the NVF3055L108T1G for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active, Not Rec Compliance PbAHP
Package Type SOT-223-4 / TO-261-4D Case Outline 0.0318
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 1000
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 60
VGS Max (V) 15 VGS(th) Max (V) 2
ID Max (A) 3 PD Max (W) 2.1
RDS(on) Max @ VGS = 4.5 V (mΩ) 120 Qg Typ @ VGS = 4.5 V (nC) 18
Qg Typ @ VGS = 10 V (nC) 7.6 Ciss Typ (pF) 313
Pricing ($/Unit) $0.4935

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