NVBG160N120SC1
MOSFET SIC MOS D2PAK-7L 160MOHM 1200V
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $10.062 | $10.06 |
10 | $8.850 | $88.50 |
30 | $8.111 | $243.33 |
100 | $6.871 | $687.10 |
Inventory:5,446
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
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Part Number : NVBG160N120SC1
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Package/Case : D2PAK-7L
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Brands : onsemi
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Components Categories : Single FETs, MOSFETs
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Datesheet : NVBG160N120SC1 DataSheet (PDF)
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Series : NVBG160N120SC1
Overview of NVBG160N120SC1
Meet the NVBG160N120SC1, an advanced EliteSiC MOSFET that represents a significant leap forward in switching performance and reliability. Through its low ON resistance and compact chip size, this innovative MOSFET delivers low capacitance and gate charge, leading to a range of system benefits including enhanced efficiency, faster operation frequency, increased power density, reduced EMI, and a more compact system size. With these advantages, the NVBG160N120SC1 is set to revolutionize power management and electronic applications by offering a more efficient and reliable solution to address the demands of today's technology-driven world
Key Features
- Compact and Energy Efficient
- Ruggedized for Harsh Environments
- High Reliability and Low Failures Rate
- Packed with Advanced Features
- Fully Tested for Quality Assurance
- Compliant to International Standards
Application
- Flexible configuration
- Long lifespan
- Energy-saving features
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | onsemi | Product Category | MOSFET |
RoHS | Details | Technology | SiC |
Mounting Style | SMD/SMT | Package / Case | D2PAK-7L |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 1.2 kV | Id - Continuous Drain Current | 19.5 A |
Rds On - Drain-Source Resistance | 224 mOhms | Vgs - Gate-Source Voltage | - 15 V, + 25 V |
Vgs th - Gate-Source Threshold Voltage | 4.3 V | Qg - Gate Charge | 33.8 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 136 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Brand | onsemi |
Configuration | Single | Fall Time | 7.4 ns |
Forward Transconductance - Min | 5.5 S | Product Type | MOSFET |
Rise Time | 11 ns | Factory Pack Quantity | 800 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 15 ns | Typical Turn-On Delay Time | 11 ns |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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