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NTZD5110NT1G

This product comes in a SOT-563 package with 6 pins and is delivered in Tape and Reel packaging

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Overview of NTZD5110NT1G

The NTZD5110NT1G is a high-speed, low-power dual N-channel MOSFET designed for a wide range of applications in power management and switching circuits. It features a compact package and excellent performance characteristics, making it ideal for integration into various electronic designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate for MOSFET 1
  • S: Source for MOSFET 1
  • D: Drain for MOSFET 1
  • G: Gate for MOSFET 2
  • S: Source for MOSFET 2
  • D: Drain for MOSFET 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NTZD5110NT1G for better understanding of its functionality.

Key Features

  • High-Speed Performance: The NTZD5110NT1G offers high-speed switching capabilities, suitable for applications requiring rapid response times.
  • Low-Power Operation: Designed for low power consumption, making it energy-efficient and ideal for battery-powered devices.
  • Dual N-Channel MOSFET: Features two N-channel MOSFETs in a single package for versatile circuit design options.
  • Compact Package: Comes in a compact and space-saving package, enabling integration into small form factor applications.
  • Wide Application Range: Suitable for power management, motor control, and various switching applications in electronic systems.

Note: For detailed technical specifications, please refer to the NTZD5110NT1G datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems for efficient and controlled power delivery.
  • Switching Circuits: Suitable for switching applications in electronic circuits requiring high-speed operation.
  • Motor Control: Can be integrated into motor control circuits for driving and controlling various types of motors.

Functionality

The NTZD5110NT1G is a dual N-channel MOSFET that provides high-speed switching and low-power operation. It is designed to enhance the performance of power management and switching circuits in electronic devices.

Usage Guide

  • Connection: Connect the gate, source, and drain pins of each MOSFET according to the circuit requirements.
  • Operating Voltage: Ensure that the operating voltage meets the specifications mentioned in the datasheet.
  • Heat Dissipation: Implement proper heat sinking measures if operating at high power levels to maintain optimal performance.

Frequently Asked Questions

Q: Is the NTZD5110NT1G suitable for high-frequency applications?
A: Yes, the NTZD5110NT1G offers high-speed performance, making it suitable for high-frequency applications in electronic circuits.

Equivalent

For similar functionalities, consider these alternatives to the NTZD5110NT1G:

  • STP16NF06L: An N-channel power MOSFET offering comparable performance characteristics for power management applications.
  • FDD6637: This dual N-channel MOSFET provides similar features to the NTZD5110NT1G and can be used as an alternative in circuit designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-563 Case Outline 463A-01
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 4000
ON Target Y Channel Polarity N-Channel
Configuration Dual V(BR)DSS Min (V) 60
VGS Max (V) 20 VGS(th) Max (V) 2.5
ID Max (A) 0.31 PD Max (W) 0.28
RDS(on) Max @ VGS = 4.5 V (mΩ) Q1=Q2=2500 RDS(on) Max @ VGS = 10 V (mΩ) Q1=Q2=1600
Qg Typ @ VGS = 4.5 V (nC) 0.7 Qg Typ @ VGS = 10 V (nC) 0.7
Ciss Typ (pF) 24.5 Pricing ($/Unit) $0.0609Sample

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