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NGD8201ANT4G

NGD8201ANT4G is a high-performance Trans IGBT Chip featuring N-channel design

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Overview of NGD8201ANT4G

The NGD8201ANT4G is a dual N-channel enhancement mode MOSFET designed for high-speed switching applications. This MOSFET features a low threshold voltage and high output current capability, making it suitable for power management and motor control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NGD8201ANT4G MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Provides two N-channel MOSFETs in a single package for enhanced functionality.
  • Enhancement Mode: Operates in enhancement mode for high-speed switching applications.
  • Low Threshold Voltage: Features a low threshold voltage for efficient operation in low-voltage systems.
  • High Output Current: Capable of handling high output currents, making it suitable for power applications.
  • Fast Switching Speed: Offers fast switching speeds for rapid switching transitions in electronic circuits.

Note: For detailed technical specifications, please refer to the NGD8201ANT4G datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems requiring high-speed switching capabilities.
  • Motor Control: Suitable for motor control applications where fast switching of currents is essential.
  • Inverters: Used in inverter circuits for efficient power conversion and control.

Functionality

The NGD8201ANT4G MOSFET is designed to provide efficient and reliable high-speed switching performance in various electronic applications, ensuring optimal power management and control.

Usage Guide

  • Gate Connection: Connect the Gate pin to the control signal for turning the MOSFET on and off.
  • Drain and Source Connections: Connect the Load between Drain and Source to control the current flow.

Frequently Asked Questions

Q: Is the NGD8201ANT4G suitable for high-frequency applications?
A: Yes, the NGD8201ANT4G offers fast switching speeds, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the NGD8201ANT4G:

  • IRF520N: An N-channel MOSFET with comparable specifications suitable for high-speed switching applications.
  • FQP30N06L: This MOSFET offers similar performance characteristics to the NGD8201ANT4G and can be used as an alternative.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-252-3
Mounting Style SMD/SMT Configuration Single
Collector- Emitter Voltage VCEO Max 440 V Collector-Emitter Saturation Voltage 1.5 V
Maximum Gate Emitter Voltage - 15 V, 15 V Continuous Collector Current at 25 C 20 A
Pd - Power Dissipation 125 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Series NGD8201A
Brand Littelfuse Gate-Emitter Leakage Current 300 uA
Product Type IGBT Transistors Factory Pack Quantity 2500
Subcategory IGBTs Unit Weight 0.050459 oz

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