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NTBG014N120M3P

Trans MOSFET N-CH SiC 1.2KV 104A 8-Pin(7+Tab) D2PAK T/R

Quantity Unit Price(USD) Ext. Price
1 $43.437 $43.44
30 $41.555 $1,246.65

Inventory:5,513

*The price is for reference only.
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Overview of NTBG014N120M3P

Introducing the cutting-edge product NTBG014N120M3P, a powerful addition to the 1200V M3P planar SiC MOSFET series. Engineered with precision for optimum performance in power applications, this innovative technology is a game-changer in the industry. With the ability to withstand negative gate voltage drive and turn off spikes on the gate, this product offers unparalleled reliability and efficiency

Key Features

  • Economical solution
  • Simplified wiring
  • Distributed power architecture
  • Real-time monitoring
  • Predictive maintenance
  • Improved system reliability

Application

  • Energy Efficiency Enhancement
  • Current Conversion Control
  • Electricity Transmission Optimization

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology SiC
Mounting Style SMD/SMT Package / Case D2PAK-7L
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV Id - Continuous Drain Current 104 A
Rds On - Drain-Source Resistance 20 mOhms Vgs - Gate-Source Voltage - 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage 4.63 V Qg - Gate Charge 337 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 454 W Channel Mode Enhancement
Series NTBG014N120M3P Brand onsemi
Configuration Single Fall Time 14 ns
Forward Transconductance - Min 29 S Product Type MOSFET
Rise Time 40 ns Factory Pack Quantity 800
Subcategory MOSFETs Typical Turn-Off Delay Time 74 ns
Typical Turn-On Delay Time 24 ns

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

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