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NGTB30N120IHSWG

Trans IGBT Chip N-CH 1200V 60A 192W 3-Pin(3+Tab) TO-247 Tube

Inventory:6,377

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Overview of NGTB30N120IHSWG

The NGTB30N120IHSWG is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding switching applications. Its Field Stop (FS) Trench construction ensures robustness and cost-effectiveness, making it an ideal choice for applications requiring both low on-state voltage and minimal switching loss. This IGBT is specifically tailored for resonant or soft switching applications, where superior performance is crucial for efficient operation

Key Features

  • Symmetric Gate Structure
  • Low Power Consumption
  • Isolated Fault Detection

Application

  • Digital Signal Processing
  • Wireless Communication Technologies
  • Automotive Electronics Solutions

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Obsolete
IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 60 A Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A Power - Max 192 W
Switching Energy 1mJ (off) Input Type Standard
Gate Charge 220 nC Td (on/off) @ 25°C -/210ns
Test Condition 600V, 30A, 10Ohm, 15V Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Package / Case TO-247-3
Supplier Device Package TO-247-3 Base Product Number NGTB30

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

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