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IXFN50N80Q2

Power Field-Effect Transistor with 50A I(D) and 800V

Quantity Unit Price(USD) Ext. Price
1 $34.275 $34.28
30 $33.088 $992.64

Inventory:8,747

*The price is for reference only.
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Overview of IXFN50N80Q2

The IXFN50N80Q2 is a high-power MOSFET transistor designed for use in power electronics applications. It features a high current rating and low on-state resistance, making it suitable for high-power switching and amplification.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal
  • D: Drain terminal
  • S: Source terminal
  • V: Kelvin source terminal for improved current sensing

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFN50N80Q2 for a visual representation.

Key Features

  • High Current Rating: The IXFN50N80Q2 can handle high currents, making it suitable for power applications.
  • Low On-State Resistance: The low RDS(on) ensures minimal power loss and efficient operation.
  • Enhanced Power Dissipation: This MOSFET can dissipate heat effectively, allowing for high-power operation.
  • Fast Switching Speed: It offers fast turn-on and turn-off times for rapid switching applications.
  • Kelvin Source Terminal: The dedicated Kelvin source terminal improves current sensing accuracy.

Note: For detailed technical specifications, please refer to the IXFN50N80Q2 datasheet.

Application

  • Power Amplification: Ideal for use in high-power amplification circuits requiring efficient switching.
  • Switching Power Supplies: Suitable for use in high-current switching power supply designs.
  • Motor Control: Used in motor drive and control applications due to its high current handling capabilities.

Functionality

The IXFN50N80Q2 is a high-power MOSFET transistor designed for high-current, high-speed applications such as power amplification, power supplies, and motor control. It offers efficient power handling and fast switching performance.

Usage Guide

  • Gate Drive: Provide appropriate gate voltage and drive capability for efficient switching.
  • Current Sensing: Utilize the Kelvin source terminal for accurate current sensing in high-current applications.
  • Heat Dissipation: Ensure proper heat sinking and thermal management for reliable operation at high power levels.

Frequently Asked Questions

Q: Is the IXFN50N80Q2 suitable for high-frequency switching applications?
A: Yes, the IXFN50N80Q2 offers fast switching speeds and is suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the IXFN50N80Q2:

  • IXFN55N50: A comparable high-power MOSFET transistor with similar current and voltage ratings.
  • FCPF11N60: This MOSFET offers equivalent power handling and switching characteristics for high-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Discrete Semiconductor Modules RoHS Details
Product Power MOSFET Modules Technology Si
Vgs - Gate-Source Voltage - 30 V, + 30 V Mounting Style Chassis Mount
Package / Case SOT-227-4 Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Brand IXYS
Configuration Single Fall Time 13 ns
Height 9.6 mm Id - Continuous Drain Current 50 A
Length 38.23 mm Number of Channels 1 Channel
Pd - Power Dissipation 1.135 kW Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 150 mOhms Rise Time 25 ns
Factory Pack Quantity 10 Subcategory Discrete Semiconductor Modules
Tradename HiPerFET Transistor Polarity N-Channel
Typical Turn-Off Delay Time 60 ns Typical Turn-On Delay Time 26 ns
Vds - Drain-Source Breakdown Voltage 800 V Width 25.42 mm
Unit Weight 1.058219 oz

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