MSC035SMA070B
It has a threshold voltage of 2.7V at 2mA and comes in a TO-247-3 package
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $13.787 | $13.79 |
200 | $5.336 | $1,067.20 |
500 | $5.149 | $2,574.50 |
1000 | $5.056 | $5,056.00 |
Inventory:9,557
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : MSC035SMA070B
-
Package/Case : TO-247-3
-
Brand : Microchip Technology
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : MSC035SMA070B DataSheet (PDF)
Overview of MSC035SMA070B
Elevate your systems with the revolutionary MSC035SMA070B, a premier selection from our latest collection of SiC MOSFET devices. Developed by the experts at Microchip, these SiC solutions are designed to maximize performance, allowing users to achieve superior efficiency and compactness within their systems. Benefit from the unwavering reliability of Microchip's SiC technology, ensuring continuous performance excellence for the duration of your equipment's life cycle
Key Features
- Multi-stage overcurrent protection
- Real-time power consumption monitoring
- Fast recovery time from overload
- Self-recovery after short-circuit
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Package | Tube | Product Status | Active |
FET Type | N-Channel | Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 700 V | Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V | Rds On (Max) @ Id, Vgs | 44mOhm @ 30A, 20V |
Vgs(th) (Max) @ Id | 2.7V @ 2mA | Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 20 V |
Vgs (Max) | +25V, -10V | Input Capacitance (Ciss) (Max) @ Vds | 2010 pF @ 700 V |
Power Dissipation (Max) | 283W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole | Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 | Base Product Number | MSC035 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![MMSS8050-H-TP](/files/uploads/product/s/825bc2374efc41c488e44fa7b34b2321.webp)
MMSS8050-H-TP
This product features a 25V voltage rating and can support a maximum current of 1500mA
![AFT09MS015NT1](/img/product.png)
AFT09MS015NT1
Trans RF MOSFET N-CH 40V 3-Pin PLD-1.5W T/R
![BSZ058N03MS G](/img/package/power33.jpg)
BSZ058N03MS G
With a current rating of 40 A, a voltage rating of 30 V, and a low on-resistance of 0
![F4-50R12MS4](/img/package/module.jpg)
F4-50R12MS4
Contact for details
![FDMS0312S](/img/package/pqfn.jpg)
FDMS0312S
High-power surface mount mosfet for demanding applicatio
![FDMS039N08B](/img/package/pqfn.jpg)
FDMS039N08B
N-Channel PowerTrench® MOSFET 80V, 100A, 3.9mΩ
![FDMS0300S](/img/package/pqfn.jpg)
FDMS0300S
Trans MOSFET N-CH Si 30V 31A 8-Pin PQFN EP T/R
![FDMS2572](/img/package/power33.jpg)
FDMS2572
Trans MOSFET N-CH Si 150V 4.5A 8-Pin Power 56 T/R
![FDMS3602S](/img/package/power56.jpg)
FDMS3602S
Trans MOSFET N-CH Si 25V 15A/26A 8-Pin Power 56 T/R
![FDMS2734](/img/package/power33.jpg)
FDMS2734
Product: UltraFET PowerTrench MOSFET with a voltage rating of 250V, identified as FDMS2734
![DMP3010LK3-13](/img/package/dpak.jpg)
DMP3010LK3-13
DMP3010LK3-13 is a MOSFET boasting a BVDSS (Breakdown Voltage Drain to Source) range of 25V-30V-30V
![Q8016LH6](/img/package/to220.jpg)
Q8016LH6
Featuring an impressive voltage tolerance of 800V and a maximum current handling of 16A
![MJE18008G](/img/package/to220.jpg)
MJE18008G
8A, 450V, 3-Pin TO-220AB Transistor
![IRF7306PBF](/files/uploads/product/s/69918ce6-4500-4f97-4b35-08dbc6589f1f.webp)
IRF7306PBF
N-Channel HEXFET MOSFET with 20V rating, dual configuration, and 100mOhms channel resistance
![IXEN60N120](/img/package/sot.jpg)
IXEN60N120
IGBT Transistors rated at 60 Amps and 1200 Volts
![DMG2307L-7](/img/package/sot233.jpg)
DMG2307L-7
P-channel MOSFET with 3.8A current and 30V voltage rating in SOT23 package
![FGH40N60UFDTU](/img/package/to247.jpg)
FGH40N60UFDTU
IGBT Transistor Chip, N-Type, 600V, 80A, 290W, 3-Pin (3+Tab), TO-247 Tube
![IRFBA22N50A](/img/package/to220.jpg)
IRFBA22N50A
N-Channel TO-273AA Super-220
![IRLU8726PBF](/img/package/to251.jpg)
IRLU8726PBF
Power Field-Effect Transistor IRLU8726PBF: An N-channel silicon MOSFET with 86A maximum drain current, 30V voltage rating, and 0
![IRF7303PBF](/img/package/soic8.jpg)
IRF7303PBF
IRF7303PBF: Power MOSFET with 30V dual N-channel design, 50mOhms resistance, and 16.7nC gate charge