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MMBT3906FN3_R1_00001

Bipolar Transistors - BJT PNPGENERALPURPOSESWITCHINGTRANSISTOR VCE-40V IC-200mA DFN3L

Quantity Unit Price(USD) Ext. Price
1 $0.070 $0.07
200 $0.028 $5.60
500 $0.027 $13.50
1000 $0.026 $26.00

Inventory:9,106

*The price is for reference only.
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Overview of MMBT3906FN3_R1_00001

Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 250 mW Surface Mount 3-DFN (0.6x1)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type PNP
Current - Collector (Ic) (Max) 200 mA Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V Power - Max 250 mW
Frequency - Transition 250MHz Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Package / Case DFN-3
Supplier Device Package 3-DFN (0.6x1) Base Product Number MMBT3906
Manufacturer Panjit Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 400 mV
Maximum DC Collector Current 200 mA Pd - Power Dissipation 250 mW
Gain Bandwidth Product fT 250 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series GPT-03FNP
Brand Panjit Continuous Collector Current 200 mA
DC Collector/Base Gain hfe Min 100 DC Current Gain hFE Max 300
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 8000
Subcategory Transistors Technology Si
Unit Weight 0.000039 oz

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