MJL21194
Trans GP BJT NPN 250V 16A 200000mW 3-Pin(3+Tab) TO-3BPL Tube
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.593 | $1.59 |
10 | $1.400 | $14.00 |
30 | $1.277 | $38.31 |
100 | $1.153 | $115.30 |
500 | $1.096 | $548.00 |
1000 | $1.072 | $1,072.00 |
Inventory:5,354
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : MJL21194
-
Package/Case : TO-264-3
-
Brand : Onsemi
-
Components Classification : Single Bipolar Transistors
-
Datesheet : MJL21194 DataSheet (PDF)
-
Series : MJL21194
Overview of MJL21194
The MJL21194 Bipolar Complementary Audio Power Transistor is the pinnacle of innovation in the world of audio electronics. Boasting Perforated Emitter technology, this transistor is tailored for high-powered audio output, disk head positioners, and various linear applications. Its advanced design ensures optimal performance and reliability, making it a preferred choice for audio enthusiasts and professionals alike. With the MJL21194 at your disposal, you can expect nothing but exceptional results in your audio projects, setting a new standard for quality and efficiency
Key Features
- Low Noise Figure Characterized
- Excellent Current Linearity Achieved
- High Power Gain and SOA Available
- Fast Switching Time: 0.5 μs, 50% to 90%
- Wide Operating Temperature Range
- Safe Operating Area: 1.8 A, 60 V, 500 ms
Application
- High-fidelity sound systems
- Advanced audio equipment
- Top-tier sound amplifiers
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | N |
Mounting Style | Through Hole | Package / Case | TO-264-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 250 V | Collector- Base Voltage VCBO | 400 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 1.4 V |
Maximum DC Collector Current | 16 A | Pd - Power Dissipation | 200 W |
Gain Bandwidth Product fT | 4 MHz | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Brand | onsemi |
Continuous Collector Current | 16 A | DC Collector/Base Gain hfe Min | 25 |
Height | 26.4 mm | Length | 20.3 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 25 |
Subcategory | Transistors | Technology | Si |
Width | 5.3 mm | Unit Weight | 0.352740 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![MJ4502](/files/uploads/product/s/c124915ec4c749c0b1070141068b9dd9.webp)
MJ4502
Trans GP BJT PNP 90V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray
![MJW21196](/files/uploads/product/s/852d179abda942d19aa3557809255f97.webp)
MJW21196
Compact TO-package ensures reliable performance and easy installatio
![MJE18004G](/files/uploads/product/s/6c9372b87c614fa395138645643b9ea8.webp)
MJE18004G
Characteristics of this bipolar transistor include a high voltage and power rating, as well as a low current and voltage capability
![MJD127T4G](/files/uploads/product/s/4209f90526a24d4ca505c0de84691a51.webp)
MJD127T4G
ON Semiconductor MJD127T4G PNP Darlington Transistor
![MJD350T4G](/files/uploads/product/s/1173a7e199274014a839d81a611ed387.webp)
MJD350T4G
Transistor General Purpose Bipolar Junction PNP 300V 0.5A 1560mW 3-Pin(2+Tab) DPAK Tape and Reel
![MJD45H11T4G](/files/uploads/product/s/6010b8d54d73486288ba86715c9f9a47.webp)
MJD45H11T4G
80V PNP Transistor with 8A Current Rating and 1750mW Power Dissipation in DPAK Package
![MJ11021](/img/package/to-3.jpg)
MJ11021
Transistors designed for high power applications
![MJ15002](/img/package/to3.jpg)
MJ15002
PNP Bipolar Junction Transistor MJ15002 comes encased in a TO-204AA package
![MJ3001](/files/uploads/product/s/1c0ca92107774952a59d819b77a18c81.webp)
MJ3001
Trans Darlington NPN 80V 10A 150000mW 3-Pin(2+Tab) TO-3 Bag
![MJD31CAJ](/img/package/dpak2.jpg)
MJD31CAJ
NPN Bipolar Junction Transistor with Automotive Grade Quality
![BUP313D](/img/package/to18.jpg)
BUP313D
IGBT Transistors LOW LOSS DuoPack 1200V 15A
![IXFH32N50Q](/img/package/to247.jpg)
IXFH32N50Q
IXFH32N50Q: N-Channel MOSFET in TO-247AD Package
![2SD2382](/img/package/to220f.jpg)
2SD2382
A TO-220F-packaged NPN Bipolar Junction Transistor (BJT) suitable for a wide range of applications
![SI1553CDL-T1-GE3](/img/package/sot23.jpg)
SI1553CDL-T1-GE3
Trans MOSFET N/P-CH 20V 0.7A/0.4A 6-Pin Vishay SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4 A, 0.7 A, 20 V, 6-Pin SOT-363
![NSS1C200LT1G](/img/package/sot233.jpg)
NSS1C200LT1G
PNP Bipolar Junction Transistor (BJT) designed for General Purpose Applications with a Maximum Voltage Rating of 100V and Current Rating of 2A
![MTB50P03HDLT4G](/img/package/d2pak3.jpg)
MTB50P03HDLT4G
Low on-resistance of 25 mOhm
![IXGX320N60B3](/img/package/to247.jpg)
IXGX320N60B3
Designed for applications requiring medium-speed switching at low voltages
![BSM100GB120DLC](/img/package/module.jpg)
BSM100GB120DLC
BSM100GB120DLC is a dual IGBT module with a voltage rating of 1200V and a current rating of 100A
![BLF647P,112](/img/package/sot5.jpg)
BLF647P,112
RF Mosfet LDMOS (Dual)
![BTB16-800BWRG](/img/package/to220ab.jpg)
BTB16-800BWRG
BTB16-800BWRG: Triacs designed for applications requiring 16 amps and 600 volts