MD2310FX
This robust power device offers exceptional thermal resistance, making it suitable for harsh operating environments and extended usage scenario
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.953 | $0.95 |
10 | $0.800 | $8.00 |
30 | $0.724 | $21.72 |
100 | $0.648 | $64.80 |
500 | $0.604 | $302.00 |
1000 | $0.580 | $580.00 |
Inventory:5,346
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : MD2310FX
-
Package/Case : TO-3PF
-
Brand : ST
-
Components Classification : Single Bipolar Transistors
-
Datesheet : MD2310FX DataSheet (PDF)
-
Series : MD2310FX
Overview of MD2310FX
Bipolar (BJT) Transistor NPN 700 V 14 A 62 W Through Hole TO-3PF
Key Features
- State-of-the-art technology - Diffused collector enhanced generation
- Stable performances versus operating temperature variation
- Low base-drive requirements
- Tight hFE range at operating collector current
- Fully insulated
- Well-controlled hFE parameter for increased reliability
Application
- Consumer Electronics
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | MD2310FX | Part Life Cycle Code | Obsolete |
Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-3PF |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Samacsys Manufacturer | STMicroelectronics | Case Connection | ISOLATED |
Collector Current-Max (IC) | 14 A | Collector-Emitter Voltage-Max | 700 V |
Configuration | SINGLE | DC Current Gain-Min (hFE) | 6 |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Polarity/Channel Type | NPN | Power Dissipation-Max (Abs) | 62 W |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![BD136](/files/uploads/product/s/46297df3-3f0f-4671-61e1-08dbc6589f1f.webp)
BD136
Trans GP BJT PNP 45V 1.5A 1250mW 3-Pin(3+Tab) SOT-32 Tube
![STD150N3LLH6](/files/uploads/product/s/9ba83f28-d75d-4155-1bbb-08dbc6589f20.webp)
STD150N3LLH6
STripFET VI DeepGATE
![STFW4N150](/files/uploads/product/s/01ae0e25-ec41-48f2-65fc-08dbc6589f1f.webp)
STFW4N150
Trans MOSFET N-CH 1.5KV 4A 3-Pin(3+Tab) TO-3PF Tube
![STGW60V60DF](/files/uploads/product/s/afa0513b54a54b9e868d0f6da6af06a4.webp)
STGW60V60DF
Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
![STX0560](/files/uploads/product/s/713b21c32f4440dfbbb590b4bcabdf1d.webp)
STX0560
Fast-switching power transistor with high-voltage capability
![TIP3055](/files/uploads/product/s/4ded3812-3923-43cb-3c76-08dbc6589f20.webp)
TIP3055
Trans GP BJT NPN 60V 15A 90000mW 3-Pin(3+Tab) TO-247 Tube
![STP3N150](/files/uploads/product/s/581552bd-1bcd-4df5-e2a8-08dbc6589f1f.webp)
STP3N150
MOSFET 1500V 6Ohm 2.5A N-Channel
![BUX98A](/files/uploads/product/s/d3ab7f17-505c-41f3-2362-08dbb33edd15.webp)
BUX98A
30A, 450V, NPN, Si, POWER TRANSISTOR, TO-3, TO-3, 2 PIN
![STF13N60M2](/files/uploads/product/s/f9c962b1-23ee-49bc-1c9a-08dbc6589f1f.webp)
STF13N60M2
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
![IRF630](/files/uploads/product/s/51a78c50eff24696a07513cb6593ce8e.webp)
IRF630
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB Tube
![NXH450N65L4Q2F2SG](/img/product.png)
NXH450N65L4Q2F2SG
NPC Inverter IGBT Module with Three Levels
![SI4425BDY-T1-E3](/img/package/soic8.jpg)
SI4425BDY-T1-E3
The MOSFET has a low on-resistance of 12mΩ at 11.4A and is capable of handling up to 1.5W power dissipation at 10V
![DMG1029SV-7](/files/uploads/product/s/a76bf524-11a1-4963-aa11-08dbbf1058dd.webp)
DMG1029SV-7
The DMG1029SV-7 is a silicon N-channel MOSFET designed to operate at a maximum voltage of 60V, housed in an SOT-563 package
![IRLS3036-7PPBF](/img/package/d2pak7.jpg)
IRLS3036-7PPBF
The IRLS3036-7PPBF MOSFET is an N-channel device packaged in D2PAK-7, engineered to handle voltages of 60V and currents of 240mA
![IRLML6302TR](/img/package/to-3.jpg)
IRLML6302TR
The IRLML6302TR is a compact MOSFET suited for low-power circuitry, featuring efficient power handling capabilities
![IXTM24N50](/files/uploads/product/s/19a8ff5ca1e04374b45c5f4c6e3d33ce.webp)
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
![APT25GP90BDQ1G](/img/package/to247.jpg)
APT25GP90BDQ1G
RoHS 900V IGBT Transistors FG TO-247
![APT64GA90LD30](/img/package/to264.jpg)
APT64GA90LD30
APT64GA90LD30 - 900V Punch-Thru Insulated Gate Bipolar Transistor
![SPD02N60C3](/img/package/to252.jpg)
SPD02N60C3
N-channel 600V 1.8A Power MOSFET with DPAK packaging
![SIS414DN-T1-GE3](/img/package/power33.jpg)
SIS414DN-T1-GE3
Product Description: MOSFET SIS414DN-T1-GE3, with recommended alternative 78-SISA88DN-T1-GE3