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IXTM24N50

3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A

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Overview of IXTM24N50

The IXTM24N50 is a high-voltage MOSFET transistor designed for power electronics applications. It features a maximum voltage rating of 500V and a continuous drain current of 24A, making it suitable for high-power switching and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXTM24N50 MOSFET for a visual representation.

Key Features

  • High Voltage Rating: The IXTM24N50 has a maximum voltage rating of 500V, allowing for use in high-voltage applications.
  • High Current Capability: With a continuous drain current of 24A, this MOSFET can handle substantial currents in circuit designs.
  • Low On-Resistance: The MOSFET offers low on-resistance for reduced power dissipation and improved efficiency.
  • Fast Switching Speed: Features fast switching characteristics, enabling rapid switching transitions in power electronics applications.
  • Temperature Stability: Offers good thermal performance and temperature stability for reliable operation under varying conditions.

Note: For detailed technical specifications, please refer to the IXTM24N50 datasheet.

Application

  • Power Supply Circuits: Ideal for use in power supply circuits requiring high voltage and current handling capabilities.
  • Motor Control: Suitable for motor control applications where high-power switching is essential.
  • Inverter Systems: Used in inverter systems for converting DC power to AC power in various electronic devices.

Functionality

The IXTM24N50 MOSFET transistor is designed to control and amplify high-power signals in electronic circuits. Its high voltage rating and current capability make it a versatile component in power electronics.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal to switch the MOSFET on and off.
  • Drain Connection: Connect the load to the drain (D) pin for power delivery.
  • Source Connection: Connect the source (S) pin to the ground reference of the circuit.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IXTM24N50?
A: The IXTM24N50 has a maximum voltage rating of 500V, suitable for high-voltage applications.

Q: Can the IXTM24N50 be used for high-power amplification?
A: Yes, the IXTM24N50 is capable of handling high currents and is suitable for high-power amplification tasks.

Equivalent

For similar functionalities, consider these alternatives to the IXTM24N50:

  • IXTN24N50: A comparable high-voltage MOSFET transistor with similar performance characteristics.
  • IRF24N50: This MOSFET from International Rectifier offers comparable high-power capabilities and voltage ratings.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 500 Maximum On-Resistance @ 25 ℃ (Ohm) 0.23
Continuous Drain Current @ 25 ℃ (A) 24 Gate Charge (nC) 160
Input Capacitance, CISS (pF) 4200 Thermal resistance [junction-case] (K/W) 0.42
Configuration Single Typical Reverse Recovery Time (ns) 600
Power Dissipation (W) 300 Sample Request No

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