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IXYN100N65A3

IXYN100N65A3 IGBTs, under the XPT-GENX3 (MINI) designation, offer enhanced performance for power switching tasks

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Overview of IXYN100N65A3

The IXYN100N65A3 is a high-performance MOSFET designed for power switching applications. It features a low on-state resistance and high current-handling capability, making it suitable for power management in various electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Control terminal for turning the MOSFET on and off.
  • Drain (D): Connection for the power flow from the MOSFET.
  • Source (S): Connection for the return current from the MOSFET.
  • Substrate (S): Substrate or body connection for the MOSFET.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXYN100N65A3 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The IXYN100N65A3 offers a low RDS(on) for efficient power dissipation.
  • High Current-Handling Capability: Capable of handling high currents for power switching applications.
  • High-Speed Switching: Enables rapid on/off switching for effective power management.
  • Low Gate-Drive Power Loss: Optimized design for reduced gate power dissipation.
  • Enhanced Thermal Performance: Designed to facilitate effective heat dissipation in power applications.

Note: For detailed technical specifications, please refer to the IXYN100N65A3 datasheet.

Application

  • Power Electronics: Ideal for use in power supplies, motor control, and inverters.
  • Switching Circuits: Suitable for high-speed switching applications in electronic systems.
  • Power Management: Used in various power management and distribution systems.

Functionality

The IXYN100N65A3 MOSFET functions as a high-performance power switch, offering low on-state resistance and high current-handling capabilities for efficient power management in electronic applications.

Usage Guide

  • Gate Connection: Connect the control signal to the Gate (G) terminal for turning the MOSFET on and off.
  • Power Connections: Connect the load and power input/output to the Drain (D) and Source (S) terminals, respectively.
  • Thermal Considerations: Ensure proper thermal management to optimize the performance and reliability of the MOSFET.

Frequently Asked Questions

Q: Is the IXYN100N65A3 suitable for high-frequency switching applications?
A: Yes, the IXYN100N65A3 offers high-speed switching capabilities, making it suitable for high-frequency switching applications in electronic systems.

Equivalent

For similar functionalities, consider these alternatives to the IXYN100N65A3:

  • IXFN220N10: This is a comparable MOSFET with similar performance characteristics for power switching applications.
  • IRF540N: A MOSFET with similar power handling capabilities and suitable for power electronics and switching circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Mounting Style Screw Mount
Configuration Single Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.8 V Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 170 A Pd - Power Dissipation 600 W
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Series Planar Brand IXYS
Product Type IGBT Transistors Factory Pack Quantity 10
Subcategory IGBTs Tradename XPT, GenX3
Unit Weight 1 oz

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