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IXTX110N20L2

960W Power Dissipation

Quantity Unit Price(USD) Ext. Price
1 $29.797 $29.80
200 $11.532 $2,306.40
500 $11.126 $5,563.00
1000 $10.926 $10,926.00

Inventory:5,757

*The price is for reference only.
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Overview of IXTX110N20L2

The IXTX110N20L2 is a high-voltage power MOSFET designed for efficient power switching applications. With a maximum drain-source voltage of 200V and a continuous drain current of 110A, this MOSFET is ideal for high-power circuits requiring reliable switching performance.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXTX110N20L2 MOSFET for a visual representation.

Key Features

  • High Voltage Capability: The IXTX110N20L2 can handle up to 200V, making it suitable for high-voltage applications.
  • High Current Capacity: With a continuous drain current of 110A, this MOSFET is capable of handling high-power loads.
  • Low On-Resistance: The MOSFET features low on-resistance for efficient power switching and minimal power dissipation.
  • Fast Switching Speed: It offers fast switching characteristics, ensuring quick response times in switching applications.
  • High Temperature Performance: Designed to operate reliably at elevated temperatures, maintaining performance in demanding environments.

Note: For detailed technical specifications, please refer to the IXTX110N20L2 datasheet.

Application

  • Power Supplies: Suitable for use in high-power voltage regulator circuits and power supply units.
  • Motor Control: Ideal for motor drive applications requiring high voltage and current handling capabilities.
  • Inverter Systems: Used in inverter systems for efficient power conversion and control.

Functionality

The IXTX110N20L2 MOSFET is designed for high-voltage power switching applications, providing efficient and reliable performance in various circuits.

Usage Guide

  • Gate Control: Apply the appropriate voltage to the gate terminal for controlling the switching operation.
  • Drain-Source Connection: Connect the load or power supply between the drain and source terminals for current flow control.
  • Heat Dissipation: Ensure proper heat sinking to manage the MOSFET's temperature during operation.

Frequently Asked Questions

Q: What is the maximum drain-source voltage of the IXTX110N20L2?
A: The IXTX110N20L2 has a maximum drain-source voltage rating of 200V.

Q: Can the IXTX110N20L2 be used in high-power motor control applications?
A: Yes, the IXTX110N20L2 is well-suited for high-power motor control applications due to its high current capacity and voltage capability.

Equivalent

For similar functionalities, consider these alternatives to the IXTX110N20L2:

  • IXTK110N20L2: This is a related MOSFET model from the same manufacturer, offering similar performance with slight variations in specifications.
  • IRF3205: A power MOSFET with comparable voltage and current ratings, suitable for high-power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 200 Maximum On-Resistance @ 25 ℃ (Ohm) 0.024
Continuous Drain Current @ 25 ℃ (A) 110 Gate Charge (nC) 500
Input Capacitance, CISS (pF) 23000 Thermal resistance [junction-case] (K/W) 0.13
Configuration Single Package Type TO-247 PLUS
Typical Reverse Recovery Time (ns) 420 Power Dissipation (W) 960
Sample Request No Check Stock Yes

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