SI3590DV-T1-GE3
A versatile MOSFET suitable for 30V applications, offering both N-channel and P-channel functionality with current capabilities of 2
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Part Number : SI3590DV-T1-GE3
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Package/Case : TSOP-6
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Brands : VISHAY
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Components Categories : FET, MOSFET Arrays
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Datesheet : SI3590DV-T1-GE3 DataSheet (PDF)
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Series : SI3590DV
The SI3590DV-T1-GE3 is a dual N-channel MOSFET IC designed for high-power switching applications in electronic circuits. It features low on-resistance and high current-handling capabilities, making it suitable for power management and conversion tasks. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI3590DV-T1-GE3 IC for a visual representation. Note: For detailed technical specifications, please refer to the SI3590DV-T1-GE3 datasheet. Functionality The SI3590DV-T1-GE3 is a dual N-channel MOSFET IC designed to facilitate high-power switching operations. It enables efficient power management and control in various electronic systems. Usage Guide Q: Is the SI3590DV-T1-GE3 suitable for automotive applications? For similar functionalities, consider these alternatives to the SI3590DV-T1-GE3:Overview of SI3590DV-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SI3590DV-T1-GE3 is designed to meet automotive industry standards and can be used in automotive power systems.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | TSOP-6 |
Transistor Polarity | N-Channel, P-Channel | Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 3 A, 2 A |
Rds On - Drain-Source Resistance | 77 mOhms, 170 mOhms | Vgs - Gate-Source Voltage | - 12 V, + 12 V |
Vgs th - Gate-Source Threshold Voltage | 600 mV | Qg - Gate Charge | 4.5 nC, 6 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1.15 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Series | SI3 |
Brand | Vishay Semiconductors | Configuration | Dual |
Fall Time | 7 ns, 20 ns | Forward Transconductance - Min | 10 S, 5 S |
Product Type | MOSFET | Rise Time | 12 ns, 15 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel, 1 P-Channel | Typical Turn-Off Delay Time | 13 ns, 20 ns |
Typical Turn-On Delay Time | 5 ns, 5 ns | Part # Aliases | SI3590DV-GE3 |
Unit Weight | 0.000705 oz |
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