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SI3590DV-T1-GE3

A versatile MOSFET suitable for 30V applications, offering both N-channel and P-channel functionality with current capabilities of 2

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Overview of SI3590DV-T1-GE3

The SI3590DV-T1-GE3 is a dual N-channel MOSFET IC designed for high-power switching applications in electronic circuits. It features low on-resistance and high current-handling capabilities, making it suitable for power management and conversion tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate for MOSFET 1
  • S: Source for MOSFET 1
  • D: Drain for MOSFET 1
  • G: Gate for MOSFET 2
  • S: Source for MOSFET 2
  • D: Drain for MOSFET 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI3590DV-T1-GE3 IC for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Provides two N-channel MOSFETs for efficient power switching.
  • Low On-Resistance: Ensures minimal power loss during operation.
  • High Current-Handling Capacity: Capable of handling high currents for power management applications.
  • High Speed Switching: Offers fast switching times for responsive power control.
  • Wide Operating Voltage Range: Compatible with a range of supply voltages for versatile applications.

Note: For detailed technical specifications, please refer to the SI3590DV-T1-GE3 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems requiring high-efficiency switching.
  • Voltage Regulators: Suitable for implementing voltage regulation and conversion tasks in electronic circuits.
  • Motor Control: Can be used in motor control applications for efficient power switching.

Functionality

The SI3590DV-T1-GE3 is a dual N-channel MOSFET IC designed to facilitate high-power switching operations. It enables efficient power management and control in various electronic systems.

Usage Guide

  • Gate Connection: Connect the gate pins (G) to the control signals for each MOSFET.
  • Source/Drain Connections: Connect the source (S) and drain (D) pins to the circuit components as per the application requirements.

Frequently Asked Questions

Q: Is the SI3590DV-T1-GE3 suitable for automotive applications?
A: Yes, the SI3590DV-T1-GE3 is designed to meet automotive industry standards and can be used in automotive power systems.

Equivalent

For similar functionalities, consider these alternatives to the SI3590DV-T1-GE3:

  • SI2337DS-T1-GE3: A comparable dual N-channel MOSFET IC offering similar characteristics for power switching applications.
  • SI7868DP-T1-E3: This dual P-channel MOSFET IC provides complementary functionality to the SI3590DV-T1-GE3 for specific circuit requirements.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case TSOP-6
Transistor Polarity N-Channel, P-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 3 A, 2 A
Rds On - Drain-Source Resistance 77 mOhms, 170 mOhms Vgs - Gate-Source Voltage - 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage 600 mV Qg - Gate Charge 4.5 nC, 6 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.15 W Channel Mode Enhancement
Tradename TrenchFET Series SI3
Brand Vishay Semiconductors Configuration Dual
Fall Time 7 ns, 20 ns Forward Transconductance - Min 10 S, 5 S
Product Type MOSFET Rise Time 12 ns, 15 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel, 1 P-Channel Typical Turn-Off Delay Time 13 ns, 20 ns
Typical Turn-On Delay Time 5 ns, 5 ns Part # Aliases SI3590DV-GE3
Unit Weight 0.000705 oz

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