IXTP8N50P
N-Channel Silicon Metal-oxide Semiconductor FET
Inventory:8,902
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
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Part Number : IXTP8N50P
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Package/Case : TO-220-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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Datesheet : IXTP8N50P DataSheet (PDF)
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Series : IXTP8N50
Overview of IXTP8N50P
N-Channel 500 V 8A (Tc) 150W (Tc) Through Hole TO-220-3
Key Features
- International standard packages
- Unclamped Inductive Switching (UIS)
- rated
- Low package inductance
- - easy to drive and to protect
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Series | PolarHV™ | Package | Tube |
| Product Status | Obsolete | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4A, 10V | Vgs(th) (Max) @ Id | 5.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V | Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 | Package / Case | TO-220-3 |
| Base Product Number | IXTP8 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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