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IXTL2N470

N-Channel MOSFET: Designed for Very High Voltage Applications

Inventory:6,349

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Overview of IXTL2N470

Dare to dream big with the IXTL2N470, a formidable player in the Very High Voltage series of N-Channel Standard MOSFETs. Built to withstand blocking voltages of up to 4.5kV, this MOSFET is a game-changer for power conversion applications that require lightning-fast switching capabilities. Its on-state resistance features a positive temperature coefficient, making it the perfect candidate for parallel device operation and offering a more cost-effective alternative to lower-voltage MOSFETs. By choosing the IXTL2N470, designers can simplify their designs, optimize their circuitry, and achieve significant space savings on their PCB boards, all while ensuring the utmost reliability and performance of their systems

Key Features

  • Ruggedized package
  • Excellent thermal performance
  • Compliance with IEC/EN 60950 standard
  • Silicon-controlled rectifier (SCR) compatible

Application

  • Advanced technology
  • Multiple applications
  • Efficient performance

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 4700 V Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 20Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6860 pF @ 25 V
Power Dissipation (Max) 220W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Supplier Device Package ISOPLUSi5-Pak™
Package / Case ISOPLUSi5-PAK™ Base Product Number IXTL2

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    Parts Quality Guarantee: 365 days

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