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IXTH220N20X4

Discrete MOSFET with 220A and 200V

Quantity Unit Price(USD) Ext. Price
1 $13.507 $13.51
200 $5.228 $1,045.60
500 $5.045 $2,522.50
1000 $4.953 $4,953.00

Inventory:9,333

*The price is for reference only.
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Overview of IXTH220N20X4

In summary, the IXTH220N20X4 power MOSFET is a versatile and dependable component that meets the demands of high power applications. With its advanced features, robust construction, and reliable performance, this MOSFET is a valuable asset for engineers and designers seeking to optimize power systems for optimal efficiency and productivity

Key Features

  • Wide Operating Temperature Range
  • High Power Density
  • Ultra Low Input Current
  • Low Dropout Voltage

Application

  • High Efficiency Power Supplies
  • Advanced Battery Management
  • Reliable Redundant Systems

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series Ultra X4 Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 220A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 110A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12300 pF @ 25 V Power Dissipation (Max) 800W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Supplier Device Package ISO TO-247-3 Package / Case TO-247-3
Base Product Number IXTH220

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