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IXTA26P20P

MOSFET capable of handling 26.0 Amps with a voltage rating of 200V and Rds of 0.170

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Overview of IXTA26P20P

The IXTA26P20P is a power MOSFET transistor designed for high-power applications. It features a voltage rating of 200V, making it suitable for use in various power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for controlling the flow of current
  • D: Drain terminal for the main current conduction
  • S: Source terminal for the return current
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXTA26P20P MOSFET for a visual representation.

Key Features

  • High Voltage Rating: The IXTA26P20P can handle voltages up to 200V, suitable for high-power applications.
  • Low On-Resistance: Offers low on-state resistance for efficient power management and minimal power dissipation.
  • High Current Handling: Capable of handling high continuous and pulsed currents, making it suitable for power switching applications.
  • Robust Construction: Designed for reliable performance and durability in demanding environments.
  • Enhanced Power Efficiency: Provides efficient power conversion and management capabilities.

Note: For detailed technical specifications, please refer to the IXTA26P20P datasheet.

Application

  • Power Management Systems: Ideal for use in power supply units, inverters, and motor control applications.
  • Switching Circuits: Suitable for high-power switching applications in industrial and automotive systems.
  • Voltage Regulation: Can be used in voltage regulation and power distribution circuits.

Functionality

The IXTA26P20P is a high-voltage power MOSFET designed for efficient power management and switching applications. It offers reliable performance and robust construction for demanding power systems.

Usage Guide

  • Gate Control: Apply the appropriate gate-source voltage to control the flow of current through the MOSFET.
  • Load Connection: Connect the load between the drain and the power supply, ensuring proper current path.
  • Heat Dissipation: Provide adequate heat sinking to manage the thermal characteristics of the MOSFET during operation.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IXTA26P20P?
A: The IXTA26P20P has a maximum voltage rating of 200V, making it suitable for high-voltage applications.

Q: Can the IXTA26P20P handle high current pulses?
A: Yes, the IXTA26P20P is capable of handling high continuous and pulsed currents, making it suitable for power switching applications with varying load conditions.

Equivalent

For similar functionalities, consider these alternatives to the IXTA26P20P:

  • IXFH26N80P: A power MOSFET with a voltage rating of 800V, offering higher voltage handling capabilities.
  • IXTH48N20P: This MOSFET provides comparable high-power performance with a 200V voltage rating and enhanced current handling.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) -200 Maximum On-Resistance @ 25 ℃ (Ohm) 0.17
Continuous Drain Current @ 25 ℃ (A) -26 Gate Charge (nC) 56
Input Capacitance, CISS (pF) 2740 Thermal resistance [junction-case] (K/W) 0.42
Configuration Single Package Type TO-263
Typical Reverse Recovery Time (ns) 240 Power Dissipation (W) 300
Sample Request Yes Check Stock Yes

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