IRFZ44NSPBF
MOSFET with a 60V voltage rating, N-channel type, HEXFET technology, 17.5mOhms on-resistance, and 16.7nC total gate charge
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.811 | $0.81 |
200 | $0.315 | $63.00 |
500 | $0.304 | $152.00 |
1000 | $0.298 | $298.00 |
Inventory:9,269
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Part Number : IRFZ44NSPBF
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Package/Case : TO-252-3
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Brand : Infineon
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Components Classification : Single FETs, MOSFETs
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Datesheet : IRFZ44NSPBF DataSheet (PDF)
The IRFZ44NSPBF is an N-channel Power MOSFET designed for various high-current switching applications. It features a low on-state resistance and fast switching capability, making it suitable for power management and motor control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRFZ44NSPBF MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IRFZ44NSPBF datasheet. Functionality The IRFZ44NSPBF N-channel Power MOSFET provides efficient switching and control of high currents in power management and motor control circuits, offering low on-state resistance and fast switching characteristics. Usage Guide Q: Can the IRFZ44NSPBF be used for high-frequency switching applications? Q: What is the maximum current rating of the IRFZ44NSPBF? For similar functionalities, consider these alternatives to the IRFZ44NSPBF:Overview of IRFZ44NSPBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the MOSFET's fast switching speed makes it suitable for efficient high-frequency PWM control.
A: The IRFZ44NSPBF can handle high continuous drain currents, making it suitable for power switching applications with heavy loads.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-252-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 55 V |
Id - Continuous Drain Current | 49 A | Rds On - Drain-Source Resistance | 17.5 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 42 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 110 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 45 ns | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Rise Time | 60 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 44 ns |
Typical Turn-On Delay Time | 12 ns | Width | 6.22 mm |
Part # Aliases | SP001560684 | Unit Weight | 0.011640 oz |
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