IXSN35N120AU1
Distributor of Electronics from France Established in 1988
Inventory:7,746
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Part Number : IXSN35N120AU1
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Package/Case : SOT-227B-4
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Brand : IXYS
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Components Classification : IGBT Modules
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Datesheet : IXSN35N120AU1 DataSheet (PDF)
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Series : IXSN35N120
The IXSN35N120AU1 is a high power density, high efficiency, and high reliable power MOSFET designed for use in various power electronics applications. This MOSFET is part of the IXYS X-Class high voltage, high current IGBT modules, offering exceptional performance and robustness. Note: For detailed technical specifications, please refer to the IXSN35N120AU1 datasheet.Overview of IXSN35N120AU1
Key Features
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | SOT-227B-4 |
| Mounting Style | SMD/SMT | Configuration | Single Dual Emitter |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Series | IXSN35N120 | Brand | IXYS |
| Continuous Collector Current Ic Max | 70 A | Height | 9.6 mm |
| Length | 38.23 mm | Product Type | IGBT Transistors |
| Factory Pack Quantity | 10 | Subcategory | IGBTs |
| Width | 25.42 mm | Unit Weight | 1.058219 oz |
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