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IXFN55N50

N-channel Power MOSFET, 55 Amps, 500 Volts, 4-Pin SOT-227B

Quantity Unit Price(USD) Ext. Price
1 $80.758 $80.76
200 $31.253 $6,250.60
500 $30.154 $15,077.00
1000 $29.613 $29,613.00

Inventory:9,456

*The price is for reference only.
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Overview of IXFN55N50

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.

Key Features

  • High current handling
  • Low thermal resistance
  • Pulse width modulation support
  • Fully encapsulated package

Application

  • Robust thermal design
  • Fast switching speed
  • Long lifespan

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™ Package Tube
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 27.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 330 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V Power Dissipation (Max) 625W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN55

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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