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IXFN48N60P

Explore the IXFN48N60P: a robust N-channel MOSFET tailored for high-voltage scenarios

Quantity Unit Price(USD) Ext. Price
1 $23.347 $23.35
200 $9.035 $1,807.00
500 $8.718 $4,359.00
1000 $8.561 $8,561.00

Inventory:8,060

*The price is for reference only.
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Overview of IXFN48N60P

The Polar HiPerFETs IXFN48N60P boast an impressive array of features, setting them apart from other products in their class. By combining the strengths of the Polar Standard product family with a faster body diode, these transistors offer unparalleled performance. Specifically, they provide reduced reverse recovery time (trr), making them well-suited for demanding applications like phase-shift bridges and uninterruptible power supplies (UPS). This family of HiPerFETs stands out for its exceptional characteristics, including the lowest RDS(on) values, low thermal resistance (RthJC), minimal gate charge (Qg), and enhanced dv/dt capabilities

Key Features

  • Robust Electrical Characteristics
  • Compact Design for Small Spaces
  • Low Vce Saturation Voltage

Application

  • Optimized power control
  • Industry-leading efficiency

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Polar Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 4A, 10V Vgs(th) (Max) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 8860 pF @ 25 V Power Dissipation (Max) 625W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN48

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