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IXFN36N60

This discrete semiconductor module, designated as IXFN36N60, is designed for applications requiring 600V and 36A

Quantity Unit Price(USD) Ext. Price
1 $71.190 $71.19
200 $28.406 $5,681.20
500 $27.457 $13,728.50
1000 $26.988 $26,988.00

Inventory:9,554

*The price is for reference only.
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Overview of IXFN36N60

Power system designers can rely on the IXFN36N60 MOSFET to deliver exceptional performance in their applications. With a low gate charge and strong ruggedness, this N-Channel HiPerFET™ is well-suited for both hard switching and resonant mode operations. Moreover, its fast intrinsic diode contributes to improved efficiency. Available in various standard industrial packages, including isolated types, the HiPerFET™ Standard series provides options for different design requirements

Key Features

  • Advanced Power Device
  • Higher Datasheet Ratings
  • Improved Thermal Performance

Application

  • Efficient power switching
  • Reliable performance
  • Wide application range

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™ Package Tube
Product Status Not For New Designs FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 325 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 25 V Power Dissipation (Max) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN36

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

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