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IXFN32N120P

IXFN32N120P High-Power N-Channel Transistor with 32A Current Rating

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Overview of IXFN32N120P

Elevate your system performance with the IXFN32N120P HiPerFETs from Polar™, engineered to deliver exceptional efficiency and reliability in demanding applications such as phase-shift bridges motor control and UPS systems. Featuring a faster body diode with reduced reverse recovery time (trr), these FETs enhance overall system performance and efficiency. With the lowest RDS(on) in their class, along with low RthJC and low Qg values, these FETs offer superior power dissipation capabilities and advanced thermal management. The enhanced DV/DT capability further underscores the versatility and reliability of the HiPerFET family, making them the ideal choice for high-power applications where precision and efficiency are essential

Key Features

  • Low ESR Ceramic Capacitors
  • Improved Thermal Performance
  • Miniature Leadframe
  • Rapid Self-Recovery

Application

  • Robust Power Transistors
  • Superior Thermal Performance
  • Flexible Power Designs

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Polar Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 310mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 21000 pF @ 25 V Power Dissipation (Max) 1000W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN32

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    Parts Quality Guarantee: 365 days

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