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IXFN300N10P

100V 295A Transistor

Inventory:5,191

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Submit your quote request for IXFN300N10P using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IXFN300N10P

The IXFN300N10P Polar™ HiPerFETs offer a unique blend of advanced features and cutting-edge technology. Their fast body diode and reduced reverse recovery time make them well-suited for high-frequency applications, where efficiency and precision are paramount. With a focus on delivering high performance and reliability, these FETs are a key component in modern power electronics designs

Key Features

  • Low Leakage Current
  • High Impedance to Ground
  • Simplified Circuit Design

Application

  • Efficient power supply solution

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Polar Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 295A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 279 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V Power Dissipation (Max) 1070W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN300

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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