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IXFN170N10

IXFN170N10 SOT-227B MOSFETs ROHS

Quantity Unit Price(USD) Ext. Price
1 $101.271 $101.27
200 $40.408 $8,081.60
500 $39.059 $19,529.50
1000 $38.392 $38,392.00

Inventory:9,947

*The price is for reference only.
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Overview of IXFN170N10

IXFN170N10 belongs to the N-Channel HiPerFET™ Standard series, offering a range of Power MOSFETs that excel in both hard switching and resonant mode applications. With low gate charge and exceptional ruggedness, these MOSFETs are well-suited for demanding industrial environments. The inclusion of a fast intrinsic diode further enhances the efficiency and reliability of this series, making it a popular choice in the market. Additionally, the availability of isolated types in standard industrial packages adds to the convenience and accessibility of these MOSFETs for various industrial applications

Key Features

  • Robust Against ESD Transient
  • High Surge Current Handling Capability
  • Suitable for Power Supply Applications
  • Fully Compliant to International Standards

Application

  • Quiet operation
  • High switching frequency
  • Stable output current

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™ Package Tube
Product Status Not For New Designs FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 515 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10300 pF @ 25 V Power Dissipation (Max) 600W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN170

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    Parts Quality Guarantee: 365 days

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