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IXFK80N50P

0N50P is a high-voltage, high-current N-channel MOSFET

Inventory:6,440

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Overview of IXFK80N50P

The IXFK80N50P family of HiPerFETs boasts a range of impressive features that set them apart from traditional power MOSFETs. With the lowest RDS(on) in their class, along with low RthJC and Qg, these FETs deliver unmatched performance in terms of power dissipation and switching characteristics. Additionally, their enhanced DV/DT capability makes them ideal for applications where fast switching speeds are crucial

Key Features

  • Robust Construction
  • Fault Tolerant
  • Low EMI

Application

  • High-frequency operation
  • Efficient power management
  • Low EMI

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer IXYS Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-264-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 80 A
Rds On - Drain-Source Resistance 65 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 197 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.04 mW Channel Mode Enhancement
Tradename HiPerFET Series IXFK80N50
Brand IXYS Configuration Single
Fall Time 16 ns Forward Transconductance - Min 70 S
Height 26.16 mm Length 19.96 mm
Product Type MOSFET Rise Time 27 ns
Factory Pack Quantity 25 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 70 ns
Typical Turn-On Delay Time 25 ns Width 5.13 mm
Unit Weight 0.352740 oz

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