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IXFK48N50

N-Channel Silicon Metal-oxide Semiconductor FET with 0.1ohm

Inventory:6,018

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Overview of IXFK48N50

The IXFK48N50 is a high-power MOSFET transistor designed for various electronic applications requiring high current and voltage handling capabilities. This transistor features a low on-resistance and high efficiency, making it suitable for power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal
  • D: Drain terminal
  • S: Source terminal
  • B: Body diode terminal
  • VCC: Positive power supply
  • GND: Power ground
  • NC: No connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFK48N50 MOSFET for a visual representation.

Key Features

  • High Current Handling: The IXFK48N50 is capable of handling high currents, making it suitable for power applications.
  • Low On-Resistance: With a low on-resistance, this MOSFET minimizes power losses and heat generation.
  • High Efficiency: The high efficiency of the IXFK48N50 enables energy-efficient operations in electronic circuits.
  • Fast Switching Speed: This MOSFET offers fast switching speeds for rapid power management.
  • Overcurrent Protection: Includes built-in protections against overcurrent conditions for enhanced reliability.

Note: For detailed technical specifications, please refer to the IXFK48N50 datasheet.

Application

  • Power Management: Ideal for power management circuits in applications such as motor control and voltage regulation.
  • Switching Circuits: Suitable for use in high-speed switching circuits for efficient power handling.
  • Inverter Systems: Used in inverter systems for converting DC power to AC power in electronic devices.

Functionality

The IXFK48N50 MOSFET is a high-power transistor that efficiently controls large amounts of current flow in electronic circuits. It serves as a reliable component for power management and switching applications.

Usage Guide

  • Gate Connection: Connect the Gate (G) terminal to the driving circuit for controlling the transistor.
  • Power Supply: Connect the Drain (D) terminal to the positive power supply (VCC) and the Source (S) terminal to the load.
  • Heat Dissipation: Ensure proper heat sinking to dissipate heat generated during high-current operations.

Frequently Asked Questions

Q: What is the maximum current rating of the IXFK48N50 MOSFET?
A: The IXFK48N50 can handle a maximum current of 48A under specified conditions.

Q: Is the IXFK48N50 suitable for high-frequency applications?
A: While the IXFK48N50 offers fast switching speeds, it is recommended for medium to low-frequency applications due to its inherent characteristics.

Equivalent

For similar functionalities, consider these alternatives to the IXFK48N50:

  • IRF840: This MOSFET offers comparable performance to the IXFK48N50 with a different package and slightly varied specifications.
  • STP55NF06L: A power MOSFET from STMicroelectronics, providing similar characteristics to the IXFK48N50 for power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 500 Maximum On-Resistance @ 25 ℃ (Ohm) 0.1
Continuous Drain Current @ 25 ℃ (A) 48 Gate Charge (nC) 270
Input Capacitance, CISS (pF) 8400 Thermal resistance [junction-case] (K/W) 0.24
Configuration Single Package Type TO-264
Power Dissipation (W) 521 Maximum Reverse Recovery (ns) 250
Sample Request No Check Stock Yes

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