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NJVMJD31CT4G-VF01

NJVMJD31CT4G-VF01 features: NPN DPAK Bipolar Transistors - BJT

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Overview of NJVMJD31CT4G-VF01

The NJVMJD31CT4G-VF01 is an N-channel Power MOSFET designed for high-performance switching applications. It features a low on-state resistance and high current capability, making it suitable for power management and other electronic control circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VCC: Positive power supply
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NJVMJD31CT4G-VF01 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The NJVMJD31CT4G-VF01 MOSFET offers a low on-state resistance to minimize power loss during switching.
  • High Current Capability: This MOSFET is capable of handling high currents, making it suitable for power applications.
  • Fast Switching Speed: With its high-performance characteristics, the NJVMJD31CT4G-VF01 provides fast switching for efficient power management.
  • Robust Construction: Designed for reliability, this MOSFET is built to withstand demanding operating conditions.

Note: For detailed technical specifications, please refer to the NJVMJD31CT4G-VF01 datasheet.

Application

  • Power Management: Ideal for use in power management circuits, including DC-DC converters and voltage regulation.
  • Motor Control: Suitable for controlling high-power motors and actuators in industrial and automotive applications.
  • Inverters and Switching Circuits: Used in various electronic control circuits requiring high-performance switching capabilities.

Functionality

The NJVMJD31CT4G-VF01 N-channel Power MOSFET is designed to efficiently control high currents and minimize power loss in switching applications. It provides reliable and robust performance for power management and electronic control circuits.

Usage Guide

  • Power Supply: Connect the VCC pin to the positive power supply and the GND pin to ground.
  • Gate Control: Apply the appropriate voltage to the Gate (G) pin to control the switching operation of the MOSFET.
  • Load Connection: Connect the load to the Drain (D) and Source (S) pins of the MOSFET.

Equivalent

For similar functionalities, consider these alternatives to the NJVMJD31CT4G-VF01:

  • IRF740: An N-channel Power MOSFET with comparable performance characteristics suitable for high-power switching applications.
  • STP55NF06: This MOSFET from STMicroelectronics offers similar power handling capabilities and low on-state resistance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case DPAK-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 100 V Collector- Base Voltage VCBO 100 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 1.2 V
Maximum DC Collector Current 3 A Pd - Power Dissipation 15 W
Gain Bandwidth Product fT 3 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Series MJD31
Brand onsemi Continuous Collector Current 3 A
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 2500
Subcategory Transistors Technology Si
Unit Weight 0.011640 oz

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