IXFK34N80
N-channel MOSFET Discrete with 34A current handling capability and 800V voltage rating, TO264 package
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $66.939 | $66.94 |
200 | $26.710 | $5,342.00 |
500 | $25.817 | $12,908.50 |
1000 | $25.376 | $25,376.00 |
Inventory:6,145
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : IXFK34N80
-
Package/Case : TO-264-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : IXFK34N80 DataSheet (PDF)
The IXFK34N80 is an N-channel power MOSFET designed for high power switching applications. It features a voltage rating of 800V and a current rating of 34A, making it suitable for high voltage and high current circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IXFK34N80 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IXFK34N80 datasheet. Functionality The IXFK34N80 MOSFET is designed to handle high voltage and high current applications, providing efficient power switching capabilities for various electronic circuits. Usage Guide Q: What is the maximum voltage rating of the IXFK34N80? Q: Can the IXFK34N80 be used for high power amplifiers? For similar functionalities, consider these alternatives to the IXFK34N80:Overview of IXFK34N80
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IXFK34N80 is rated at 800V, suitable for high voltage applications.
A: Yes, the IXFK34N80's high current capability makes it suitable for high power amplifier applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Drain-Source Voltage (V) | 800 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.24 |
Continuous Drain Current @ 25 ℃ (A) | 34 | Gate Charge (nC) | 270 |
Input Capacitance, CISS (pF) | 7500 | Thermal resistance [junction-case] (K/W) | 0.22 |
Configuration | Single | Package Type | TO-264 |
Power Dissipation (W) | 568 | Maximum Reverse Recovery (ns) | 250 |
Sample Request | No | Check Stock | Yes |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![IXFB100N50P](/files/uploads/product/s/d41d9992ca594ed88ea6f863c3bb11f4.webp)
IXFB100N50P
High-power N-channel MOSFET with 3+Tab Pin Configuration
![IXFH44N50P](/files/uploads/product/s/76d41e9fb68f47e6acc0d0f14f105b9f.webp)
IXFH44N50P
44A, 500V N-channel transistor with TO-247AD packaging
![IXFX180N25T](/files/uploads/product/s/fce1751c-4c05-4474-12e2-08dbc6589f1f.webp)
IXFX180N25T
MOSFET Discrete Component with 180A current capability and 250V voltage rating
![IXFX48N50Q](/files/uploads/product/s/c111d61187dc40ca8ecfa6164c5648c2.webp)
IXFX48N50Q
Transistor MOSFET, N-Type, Capable of Handling 500 Volts and 48 Amps, Encased in TO-247 Package
![IXTA10P50P](/files/uploads/product/s/8054a279f41a45c4a3b0479fc733bace.webp)
IXTA10P50P
Ready to Ship within 1 Day
![IXTP80N10T](/files/uploads/product/s/710ab91dcebf4c3db92bb194c3a5edd9.webp)
IXTP80N10T
MOSFET with 80 Amps and 100V, featuring a Rds of 13.0 for high performance
![IXKR25N80C](/files/uploads/product/s/f8d09721-af36-493e-ce33-08dbc6589f1f.webp)
IXKR25N80C
Three-pin N-channel MOSFET with 800V and 25A rating
![IXFK94N50P2](/files/uploads/product/s/7b0c02188148464b8acac3f38655a7a7.webp)
IXFK94N50P2
Trans MOSFET N-CH 500V 94A 3-Pin(3+Tab) TO-264
![IXTN110N20L2](/files/uploads/product/s/8d573de33a5c45f9bc9d639282027e4d.webp)
IXTN110N20L2
SOT227B-packaged single transistor module engineered for 200V operation and 100A current handling
![IXTP96P085T](/files/uploads/product/s/88b82cf69b8d41fbb118025b6f54baeb.webp)
IXTP96P085T
Metal-oxide Semiconductor FET, P-Channel, 96A Drain Current, 85V Voltage, 0.013ohm On-State Resistance, TO-220AB Housing
![BSM150GB120DLC](/img/package/module.jpg)
BSM150GB120DLC
Trans IGBT Module N-CH 1200V 300A 1250W 7-Pin 62MM-1 Tray
![Q6006LTH](/img/package/to220.jpg)
Q6006LTH
Product Q6006LTH is equipped with Triacs rated at 600 volts and 6 amps, featuring a gate trigger voltage range of 33/43 volts
![CPH3362-TL-W](/img/package/sot23.jpg)
CPH3362-TL-W
SOT-23 Surface Mount Power MOSFET, Single P-Channel, 100V, 0.7A, 3.7nC
![SI7164DP-T1-GE3](/files/uploads/product/s/053ef7c6-4081-4f7e-bc50-08dbbf1058dd.webp)
SI7164DP-T1-GE3
N-Channel Power Field-Effect Transistor with 23.5A current capacity and 60V voltage capacity
![2N6039G](/img/package/to-3.jpg)
2N6039G
Darlington Transistors 4A 80V NPN Bipolar Power
![SI4840BDY-T1-E3](/img/package/soic8.jpg)
SI4840BDY-T1-E3
SOIC-8 Surface Mount Power Mosfet with 9 mOhm resistance at 40 V
![DTC143XETL](/img/package/sc70.jpg)
DTC143XETL
The DTC143XETL represents ROHM's groundbreaking innovation as the premier digital transistor
![IRG4PC40S](/img/package/to247ac.jpg)
IRG4PC40S
N-Channel Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, TO-247AC, TO-3P, 3 PIN
![VS-GA250SA60S](/img/package/sot.jpg)
VS-GA250SA60S
Product Details: The VS-GA250SA60S IGBT module is engineered with N-channel architecture
![IXTY1R6N50D2](/img/package/dpak.jpg)
IXTY1R6N50D2
N-channel MOSFETs with a voltage rating of 500V and a current rating of 1.6A