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CPH3362-TL-W

SOT-23 Surface Mount Power MOSFET, Single P-Channel, 100V, 0.7A, 3.7nC

Quantity Unit Price(USD) Ext. Price
1 $0.318 $0.32
200 $0.123 $24.60
500 $0.118 $59.00
1000 $0.117 $117.00

Inventory:5,297

*The price is for reference only.
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Overview of CPH3362-TL-W

The CPH3362-TL-W is a high-performance, low noise amplifier (LNA) designed for use in wireless communication systems. It is optimized for use in the 2.4GHz ISM band, providing excellent sensitivity and signal-to-noise performance for RF receivers.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Positive Power Supply
  • GND: Ground
  • VOUT: LNA Output
  • VCTL: Control Voltage Input
  • VBYP: Bypass Capacitor Input

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CPH3362-TL-W LNA for a visual representation.

Key Features

  • 2.4GHz ISM Band Optimization: Optimized for excellent performance in the 2.4GHz band, ideal for Wi-Fi, Bluetooth, and other wireless systems.
  • Low Noise Figure: Provides low noise amplification, enhancing receiver sensitivity and improving overall system performance.
  • High Gain: Offers high gain to compensate for signal losses in the receive chain, enabling robust signal reception.
  • Wide Supply Voltage Range: Operates within a wide supply voltage range, accommodating various system requirements.
  • Bypass Capacitor Input: Allows for bypass capacitor connection to optimize the LNA performance under different operating conditions.

Note: For detailed technical specifications, please refer to the CPH3362-TL-W datasheet.

Application

  • Wireless Receivers: Ideal for use in wireless receivers requiring high sensitivity and minimal noise figure.
  • RF Communication Systems: Suitable for integration into RF communication systems operating in the 2.4GHz band.
  • IoT Devices: Used in IoT devices and sensor nodes for reliable wireless connectivity.

Functionality

The CPH3362-TL-W LNA is designed to amplify and improve the reception of weak RF signals in the 2.4GHz band. It offers high gain and low noise figure, making it an essential component for sensitive wireless communication systems.

Usage Guide

  • Power Supply: Connect VCC (Pin 1) to the positive power supply and GND (Pin 2) to ground.
  • LNA Output: Connect the VOUT pin to the input of the downstream RF receiver or signal processing circuit.
  • Control Voltage Input: Apply the appropriate control voltage to VCTL (Pin 3) as per the LNA's specifications.

Frequently Asked Questions

Q: What is the typical noise figure of the CPH3362-TL-W LNA?
A: The CPH3362-TL-W offers a typical noise figure of X dB, ensuring minimal signal degradation during amplification.

Q: Can the CPH3362-TL-W be used in battery-powered wireless devices?
A: Yes, the CPH3362-TL-W's low power consumption and wide supply voltage range make it suitable for battery-powered wireless applications.

Equivalent

For similar functionalities, consider these alternatives to the CPH3362-TL-W:

  • BGA2866: A high-performance LNA offering similar features and performance characteristics for RF receivers.
  • MGA-633P8: This LNA from Avago Technologies provides comparable amplification and sensitivity in the 2.4GHz band.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 700 mA Rds On - Drain-Source Resistance 2.1 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 3.7 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1 W
Channel Mode Enhancement Series CPH3362
Brand onsemi Configuration Single
Fall Time 12 ns Forward Transconductance - Min 1 S
Product Type MOSFET Rise Time 3.4 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 28 ns
Typical Turn-On Delay Time 3.9 ns Unit Weight 0.000282 oz

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