CPH3362-TL-W
SOT-23 Surface Mount Power MOSFET, Single P-Channel, 100V, 0.7A, 3.7nC
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.318 | $0.32 |
200 | $0.123 | $24.60 |
500 | $0.118 | $59.00 |
1000 | $0.117 | $117.00 |
Inventory:5,297
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Part Number : CPH3362-TL-W
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Package/Case : SOT23-3
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Brands : Onsemi
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Components Categories : Single FETs, MOSFETs
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Datesheet : CPH3362-TL-W DataSheet (PDF)
The CPH3362-TL-W is a high-performance, low noise amplifier (LNA) designed for use in wireless communication systems. It is optimized for use in the 2.4GHz ISM band, providing excellent sensitivity and signal-to-noise performance for RF receivers. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the CPH3362-TL-W LNA for a visual representation. Note: For detailed technical specifications, please refer to the CPH3362-TL-W datasheet. Functionality The CPH3362-TL-W LNA is designed to amplify and improve the reception of weak RF signals in the 2.4GHz band. It offers high gain and low noise figure, making it an essential component for sensitive wireless communication systems. Usage Guide Q: What is the typical noise figure of the CPH3362-TL-W LNA? Q: Can the CPH3362-TL-W be used in battery-powered wireless devices? For similar functionalities, consider these alternatives to the CPH3362-TL-W:Overview of CPH3362-TL-W
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The CPH3362-TL-W offers a typical noise figure of X dB, ensuring minimal signal degradation during amplification.
A: Yes, the CPH3362-TL-W's low power consumption and wide supply voltage range make it suitable for battery-powered wireless applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 700 mA | Rds On - Drain-Source Resistance | 2.1 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Qg - Gate Charge | 3.7 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1 W |
Channel Mode | Enhancement | Series | CPH3362 |
Brand | onsemi | Configuration | Single |
Fall Time | 12 ns | Forward Transconductance - Min | 1 S |
Product Type | MOSFET | Rise Time | 3.4 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 28 ns |
Typical Turn-On Delay Time | 3.9 ns | Unit Weight | 0.000282 oz |
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