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IXFK160N30T

Suitable for high current applications up to 160A and 300V voltage requirements

Inventory:8,874

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Overview of IXFK160N30T

The IXFK160N30T is a power MOSFET transistor designed for high-efficiency power switching applications. It features a low on-state resistance and high current handling capability, making it suitable for use in power supplies, motor control, and other power management systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for control input
  • D: Drain terminal for power output
  • S: Source terminal connected to ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFK160N30T MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The IXFK160N30T offers a low RDS(on) for minimal power dissipation and high efficiency.
  • High Current Handling: Capable of handling high continuous and pulsed currents, suitable for power switching applications.
  • Fast Switching Speed: Provides fast turn-on and turn-off times for efficient power control.
  • High Input Impedance: The gate input features high impedance, ensuring minimal input power for control.
  • Low Gate Charge: Requires minimal charge to switch the MOSFET, reducing switching losses.

Note: For detailed technical specifications, please refer to the IXFK160N30T datasheet.

Application

  • Power Supplies: Suitable for use in high-efficiency power supply designs, including SMPS and DC-DC converters.
  • Motor Control: Ideal for driving and controlling motors with high current requirements.
  • Power Management Systems: Used in various power management and distribution systems for efficient switching.

Functionality

The IXFK160N30T is a power MOSFET transistor that enables efficient power switching, with low on-state resistance and high current handling capabilities, making it suitable for diverse power applications.

Usage Guide

  • Connect the gate (G) terminal to the control signal for power switching.
  • Connect the drain (D) terminal to the power output or load.
  • Connect the source (S) terminal to the ground or common reference point.

Frequently Asked Questions

Q: What is the maximum current the IXFK160N30T can handle?
A: The IXFK160N30T is capable of handling high continuous and pulsed currents, with specific values provided in the datasheet.

Q: Can the IXFK160N30T be used in high-frequency switching applications?
A: Yes, the IXFK160N30T features fast switching speed and low gate charge, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the IXFK160N30T:

  • IXFK170N30T: A related power MOSFET with similar performance characteristics and package options.
  • IXFN110N30: This power MOSFET from IXYS Corporation offers comparable specifications and suitability for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 300 Maximum On-Resistance @ 25 ℃ (Ohm) 0.019
Continuous Drain Current @ 25 ℃ (A) 160 Gate Charge (nC) 376
Input Capacitance, CISS (pF) 24500 Thermal resistance [junction-case] (K/W) 0.09
Configuration Single Package Type TO-264
Power Dissipation (W) 1390 Maximum Reverse Recovery (ns) 200
Sample Request Yes Check Stock Yes

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