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IXFH60N50P3

High voltage MOSFET with 60A current rating

Inventory:7,638

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Overview of IXFH60N50P3

The IXFH60N50P3 is a high-performance power MOSFET with a voltage rating of 500V and a continuous drain current of 60A. It is designed for power switching applications where high efficiency and reliability are required.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • N/C: No Connection
  • N/C: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFH60N50P3 MOSFET for a visual representation.

Key Features

  • High Voltage Rating: With a voltage rating of 500V, the IXFH60N50P3 is suitable for high-power applications.
  • High Current Capability: The 60A continuous drain current allows for efficient power handling.
  • Low ON Resistance: The MOSFET features low ON resistance for reduced power dissipation and improved efficiency.
  • Fast Switching Speed: This MOSFET offers fast switching characteristics, ideal for applications requiring rapid switching.
  • Temperature Stability: Designed for stable operation over a wide temperature range, ensuring reliability in various conditions.

Note: For detailed technical specifications, please refer to the IXFH60N50P3 datasheet.

Application

  • Power Inverters: Ideal for use in power inverters and converters for efficient energy conversion.
  • Motor Drives: Suitable for motor drive applications where high power handling is essential.
  • Switching Power Supplies: Used in switching power supply designs for regulating and controlling power output.

Functionality

The IXFH60N50P3 MOSFET is a high-performance power switch designed to handle high voltage and current levels efficiently. It provides reliable power switching capability for various industrial and automotive applications.

Usage Guide

  • Gate Drive: Apply the appropriate gate voltage to turn the MOSFET on and off effectively.
  • Heat Management: Ensure proper heat sinking to maintain the MOSFET within its temperature limits for optimal performance.
  • Protection Circuitry: Implement protection circuits to safeguard the MOSFET from overcurrent and overvoltage conditions.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IXFH60N50P3?
A: The IXFH60N50P3 has a voltage rating of 500V, making it suitable for high-voltage applications.

Q: Can the IXFH60N50P3 be used in automotive applications?
A: Yes, the IXFH60N50P3 is designed for automotive and industrial applications requiring high-power switching capabilities.

Equivalent

For similar functionalities, consider these alternatives to the IXFH60N50P3:

  • IXFH40N60: A lower voltage variant offering similar high-current capabilities.
  • IXFN30N60: This MOSFET provides a balance between voltage rating and current handling for various applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 500 Maximum On-Resistance @ 25 ℃ (Ohm) 0.11
Continuous Drain Current @ 25 ℃ (A) 60 Gate Charge (nC) 96
Input Capacitance, CISS (pF) 6250 Thermal resistance [junction-case] (K/W) 0.12
Configuration Single Package Type TO-247
Power Dissipation (W) 1040 Maximum Reverse Recovery (ns) 250
Sample Request Yes Check Stock Yes

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