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IXFH40N30Q

IXFH40N30Q, 1-Element

Inventory:5,423

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Overview of IXFH40N30Q

The IXFH40N30Q is a high-power MOSFET transistor designed for various power applications.This transistor features a high current rating and low on-state resistance,making it suitable for power amplification and switching circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • B:Backside

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFH40N30Q MOSFET for a visual representation.

Key Features

  • High Power Capability:The IXFH40N30Q can handle high power levels,making it suitable for power applications.
  • Low On-State Resistance:With a low RDS(on),this MOSFET minimizes power loss and heat generation during operation.
  • Fast Switching Speed:This transistor offers fast switching characteristics,ideal for high-frequency switching applications.
  • High Current Rating:The IXFH40N30Q has a high current-carrying capacity,enabling it to handle significant loads.
  • Temperature Stability:Designed to operate reliably over a wide temperature range,ensuring consistent performance in various environments.

Note:For detailed technical specifications,please refer to the IXFH40N30Q datasheet.

Application

  • Power Amplification:Suitable for power amplifier circuits requiring high power handling capabilities.
  • Switching Circuits:Can be used in various switching circuits for efficient power control.
  • Motor Control:Ideal for motor control applications where high current switching is necessary.

Functionality

The IXFH40N30Q MOSFET transistor is designed to amplify and switch high-power signals efficiently.Its low on-state resistance and high current handling capacity make it a reliable choice for power applications.

Usage Guide

  • Gate Control:Apply appropriate gate voltage to control the switching state of the MOSFET.
  • Power Connections:Connect the drain and source pins to the power supply and load for power amplification or switching.
  • Heat Dissipation:Ensure proper heat sinking to dissipate heat generated during high-power operations.

Frequently Asked Questions

Q:Can the IXFH40N30Q be used in automotive applications?
A:Yes,the IXFH40N30Q is suitable for automotive power electronics applications requiring high-power handling.

Equivalent

For similar functionalities,consider these alternatives to the IXFH40N30Q:

  • IXFH50N20Q:This MOSFET offers similar high-power capabilities with a slightly different operating characteristics.
  • IXFK44N50Q:An alternative high-power MOSFET transistor with comparable performance and specifications to the IXFH40N30Q.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 300 Maximum On-Resistance @ 25 ℃ (Ohm) 0.08
Continuous Drain Current @ 25 ℃ (A) 40 Gate Charge (nC) 92
Input Capacitance, CISS (pF) 3560 Thermal resistance [junction-case] (K/W) 0.42
Configuration Single Package Type TO-247
Power Dissipation (W) 298 Maximum Reverse Recovery (ns) 250
Sample Request No Check Stock Yes

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