• packageimg
packageimg

IXFH12N90

High-Voltage MOSFET, 12 Amperes, Low Resistance

Inventory:6,261

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for IXFH12N90 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IXFH12N90

The IXFH12N90 is a high-performance 900V N-channel IGBT designed for power electronics applications. It features a robust design for efficient power switching and amplification, making it suitable for use in various industrial and automotive systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • C-E: Collector-Emitter connection
  • G: Gate terminal
  • E: Emitter terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFH12N90 IGBT for better understanding.

Key Features

  • High Voltage Rating: Supports a maximum voltage of 900V, allowing for high-power applications.
  • Low Saturation Voltage: Ensures minimal power loss during operation for efficient performance.
  • Fast Switching Speed: Offers quick switching times for improved power control in electronic circuits.
  • Robust Construction: Designed for reliable operation in harsh environments and high-temperature conditions.

Note: For detailed technical specifications, please refer to the IXFH12N90 datasheet.

Application

  • Power Inverters: Ideal for use in power inverters for converting DC power to AC power.
  • Motor Drives: Suitable for motor drive applications in industrial and automotive systems.
  • Switching Power Supplies: Used in switching power supply circuits for efficient power conversion.

Functionality

The IXFH12N90 is an N-channel IGBT that provides high voltage switching capabilities for power control applications. It enables efficient power amplification and switching in electronic systems.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate terminal for controlling the IGBT switching.
  • Power Connections: Connect the Collector and Emitter terminals to the power source according to the circuit requirements.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IXFH12N90?
A: The IXFH12N90 has a maximum voltage rating of 900V, suitable for high-power applications.

Q: Is the IXFH12N90 suitable for automotive applications?
A: Yes, the IXFH12N90 is designed for use in automotive systems requiring efficient power switching and control.

Equivalent

For similar functionalities, consider these alternatives to the IXFH12N90:

  • IRG4PH40UD: A high-voltage IGBT with similar performance characteristics to the IXFH12N90.
  • FGL60N100: This N-channel IGBT offers comparable voltage ratings and switching capabilities for power electronics applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 900 Maximum On-Resistance @ 25 ℃ (Ohm) 0.9
Continuous Drain Current @ 25 ℃ (A) 12 Gate Charge (nC) 123
Input Capacitance, CISS (pF) 4200 Thermal resistance [junction-case] (K/W) 0.42
Configuration Single Package Type TO-247
Power Dissipation (W) 298 Maximum Reverse Recovery (ns) 250
Sample Request No

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

IRFR3806PBF

IRFR3806PBF

MOSFET N-Channel 60V 43A DPAK
IRFHM831TRPBF

IRFHM831TRPBF

31trpbf n-channel mosfet transistor 14a 30v 8-pin pqfn
IXFH42N20

IXFH42N20

Described as a 200V N-channel MOSFET, IXFH42N20 boasts a hefty 42A current capacity and comes in a TO-247AD package with 3 pins
IXGK75N250

IXGK75N250

TO264 IGBT 2500V 170A 780W
FQA19N20

FQA19N20

200V 23A N-channel MOSFET TO-3P Mounting
2SJ356-T1-AZ

2SJ356-T1-AZ

Power Field-Effect Transistor 2SJ356-T1-AZ
SSM3J351R,LF

SSM3J351R,LF

MOSFET optimized for small-signal operation, featuring -3.5A drain current and -60V drain-source voltage capability
2SB1258

2SB1258

Trans Darlington PNP 100V 6A 30000mW TO-220F
SUB40N06-25L

SUB40N06-25L

60V MOSFET with 40A current rating and 3.7W power dissipation
MJD5731T4G

MJD5731T4G

BJT PNP Transistor MJD5731T4G with 350V Voltage Rating