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IXFH22N65X2

High current 650V N-channel power MOSFET

Quantity Unit Price(USD) Ext. Price
1 $4.432 $4.43
10 $4.124 $41.24
30 $3.938 $118.14
90 $3.781 $340.29

Inventory:7,409

*The price is for reference only.
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Overview of IXFH22N65X2

The innovative design of IXFH22N65X2 leverages the charge compensation principle to deliver unmatched performance. This, coupled with proprietary process technology, results in devices with exceptionally low on-state resistances, low gate charges, and superior dv/dt performance. Furthermore, their avalanche capability and fast soft-recovery body diode contribute to enhanced ruggedness and reduced switching losses and EMI, making them a top choice for a wide range of applications

Key Features

  • Ultra-fast switching
  • Reduced EMI emissions
  • Improved thermal management
  • Enhanced reliability

Application

  • Customized power modules
  • Compact charger designs
  • Durable motor controllers

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Ultra X2 Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 11A, 10V Vgs(th) (Max) @ Id 5.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2310 pF @ 25 V Power Dissipation (Max) 390W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3
Base Product Number IXFH22

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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