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IXFH150N30X3

The product description for IXFH150N30X3 includes an N-channel MOSFET with ultra junction in a quantity of 3

Inventory:6,607

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Overview of IXFH150N30X3

The IXFH150N30X3 is equipped with body diodes that feature low reverse recovery charge and time, ensuring efficient energy dissipation during high-speed switching. This capability not only prevents device failure but also enhances overall system efficiency. Additionally, these MOSFETs are avalanche capable and demonstrate superior dv/dt performance, offering robust protection against voltage spikes and parasitic transistor turn-on

Key Features

  • High reliability and consistency
  • Limited inrush current
  • Good surge immunity performance
  • Fully avalanche tested

Application

  • Innovative charging solutions
  • Robust power electronics
  • Flexible DC voltage conversion

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Ultra X3 Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.3mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 177 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13100 pF @ 25 V Power Dissipation (Max) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3
Base Product Number IXFH150

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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