IMW120R045M1
The IMW120R045M1 MOSFET is compliant with ROHS regulations, offering a voltage rating of 1
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $15.004 | $15.00 |
10 | $14.367 | $143.67 |
30 | $13.264 | $397.92 |
100 | $12.302 | $1,230.20 |
Inventory:5,510
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Part Number : IMW120R045M1
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Package/Case : TO-247-3
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Brand : INFINEON
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Components Classification : Single FETs, MOSFETs
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Datesheet : IMW120R045M1 DataSheet (PDF)
Overview of IMW120R045M1
The IMW120R045M1 product, known as the CoolSiC™ 1200 V, 45 mΩ SiC MOSFET, exemplifies cutting-edge technology in the field of power electronics. Built in a TO247-3 package, this MOSFET is crafted using a superior trench semiconductor process that prioritizes both performance and reliability. Compared to traditional silicon switches, like IGBTs and MOSFETs, the SiC MOSFET offers a wide array of advantages. These include the lowest gate charge and device capacitance levels among 1200 V switches, zero reverse recovery losses from the internal commutation proof body diode, temperature-independent low switching losses, and a threshold-free on-state characteristic. The CoolSiC™ MOSFET is particularly well-suited for hard- and resonant-switching applications, such as power factor correction circuits and bi-directional topologies
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Qualification | Industrial | ID max | 52.0 A |
Mounting | THT | Operating Temperature max | 175.0 °C |
Operating Temperature min | -55.0 °C | Ptot max | 228.0 W |
Package | TO-247-3 | Polarity | N |
RthJA max | 62.0 K/W | RthJC max | 0.66 K/W |
Tj max | 175.0 °C | VDS max | 1200.0 V |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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