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IMW120R045M1

The IMW120R045M1 MOSFET is compliant with ROHS regulations, offering a voltage rating of 1

Quantity Unit Price(USD) Ext. Price
1 $15.004 $15.00
10 $14.367 $143.67
30 $13.264 $397.92
100 $12.302 $1,230.20

Inventory:5,510

*The price is for reference only.
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Overview of IMW120R045M1

The IMW120R045M1 product, known as the CoolSiC™ 1200 V, 45 mΩ SiC MOSFET, exemplifies cutting-edge technology in the field of power electronics. Built in a TO247-3 package, this MOSFET is crafted using a superior trench semiconductor process that prioritizes both performance and reliability. Compared to traditional silicon switches, like IGBTs and MOSFETs, the SiC MOSFET offers a wide array of advantages. These include the lowest gate charge and device capacitance levels among 1200 V switches, zero reverse recovery losses from the internal commutation proof body diode, temperature-independent low switching losses, and a threshold-free on-state characteristic. The CoolSiC™ MOSFET is particularly well-suited for hard- and resonant-switching applications, such as power factor correction circuits and bi-directional topologies

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Qualification Industrial ID max 52.0 A
Mounting THT Operating Temperature max 175.0 °C
Operating Temperature min -55.0 °C Ptot max 228.0 W
Package TO-247-3 Polarity N
RthJA max 62.0 K/W RthJC max 0.66 K/W
Tj max 175.0 °C VDS max 1200.0 V

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