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IMW65R048M1H

High-current semiconductor device

Quantity Unit Price(USD) Ext. Price
1 $15.144 $15.14
10 $14.529 $145.29
30 $13.467 $404.01
100 $12.540 $1,254.00

Inventory:9,335

*The price is for reference only.
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Submit your quote request for IMW65R048M1H using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IMW65R048M1H

CoolSiC™ MOSFET technology showcases the advancements in power semiconductor devices, with the IMW65R048M1H setting a new standard in efficiency and robustness. By leveraging the unique features of silicon carbide, this MOSFET provides superior performance while maintaining ease of use. The 650V rating ensures compatibility with a variety of power systems, making it a versatile choice for engineers and designers looking to optimize their applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ID max 39.0 A Operating Temperature max 150.0 °C
Operating Temperature min -55.0 °C Ptot max 125.0 W
Polarity N Qualification Industrial
VDS max 650.0 V Package TO-247

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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