IMW65R048M1H
High-current semiconductor device
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $15.144 | $15.14 |
10 | $14.529 | $145.29 |
30 | $13.467 | $404.01 |
100 | $12.540 | $1,254.00 |
Inventory:9,335
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
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Part Number : IMW65R048M1H
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Package/Case : TO-247
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Brand : INFINEON
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Components Classification : Single FETs, MOSFETs
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Datesheet : IMW65R048M1H DataSheet (PDF)
Overview of IMW65R048M1H
CoolSiC™ MOSFET technology showcases the advancements in power semiconductor devices, with the IMW65R048M1H setting a new standard in efficiency and robustness. By leveraging the unique features of silicon carbide, this MOSFET provides superior performance while maintaining ease of use. The 650V rating ensures compatibility with a variety of power systems, making it a versatile choice for engineers and designers looking to optimize their applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
ID max | 39.0 A | Operating Temperature max | 150.0 °C |
Operating Temperature min | -55.0 °C | Ptot max | 125.0 W |
Polarity | N | Qualification | Industrial |
VDS max | 650.0 V | Package | TO-247 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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