IMW120R220M1H
1200V N-channel MOSFET with a current rating of 13A, on-resistance of 220mOhm, and TO247-3 package
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $14.616 | $14.62 |
10 | $14.034 | $140.34 |
30 | $13.025 | $390.75 |
100 | $12.147 | $1,214.70 |
Inventory:9,203
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Part Number : IMW120R220M1H
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Package/Case : TO-247-3
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Brand : INFINEON
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Components Classification : Single FETs, MOSFETs
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Datesheet : IMW120R220M1H DataSheet (PDF)
Overview of IMW120R220M1H
Introducing the cutting-edge CoolSiC™ 1200 V, 220 mΩ SiC MOSFET in TO247-3 package — a game-changing semiconductor component built for superior performance and unmatched reliability. Unlike traditional silicon-based switches such as IGBTs and MOSFETs, this SiC MOSFET stands out with its remarkably low gate charge and device capacitance levels, eliminating reverse recovery losses thanks to its internal commutation proof body diode, delivering temperature-independent low switching losses, and boasting a threshold-free on-state characteristic. These features make CoolSiC™ MOSFETs the perfect choice for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies, DC-DC converters, and DC-AC inverters
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Qualification | Industrial | ID max | 13.0 A |
Mounting | THT | Operating Temperature max | 175.0 °C |
Operating Temperature min | -55.0 °C | Ptot max | 75.0 W |
Package | TO-247-3 | Polarity | N |
RthJA max | 62.0 K/W | RthJC max | 2.0 K/W |
Tj max | 175.0 °C | VDS max | 1200.0 V |
Warranty & Returns
Warranty, Returns, and Additional Information
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Returns for refund: within 90 days
Returns for Exchange: within 90 days
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