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IMW120R220M1H

1200V N-channel MOSFET with a current rating of 13A, on-resistance of 220mOhm, and TO247-3 package

Quantity Unit Price(USD) Ext. Price
1 $14.616 $14.62
10 $14.034 $140.34
30 $13.025 $390.75
100 $12.147 $1,214.70

Inventory:9,203

*The price is for reference only.
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Overview of IMW120R220M1H

Introducing the cutting-edge CoolSiC™ 1200 V, 220 mΩ SiC MOSFET in TO247-3 package — a game-changing semiconductor component built for superior performance and unmatched reliability. Unlike traditional silicon-based switches such as IGBTs and MOSFETs, this SiC MOSFET stands out with its remarkably low gate charge and device capacitance levels, eliminating reverse recovery losses thanks to its internal commutation proof body diode, delivering temperature-independent low switching losses, and boasting a threshold-free on-state characteristic. These features make CoolSiC™ MOSFETs the perfect choice for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies, DC-DC converters, and DC-AC inverters

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Qualification Industrial ID max 13.0 A
Mounting THT Operating Temperature max 175.0 °C
Operating Temperature min -55.0 °C Ptot max 75.0 W
Package TO-247-3 Polarity N
RthJA max 62.0 K/W RthJC max 2.0 K/W
Tj max 175.0 °C VDS max 1200.0 V

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