FP50R12KT4G
High-power IGBT Module with a 50A and 1200V rating
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $74.666 | $74.67 |
| 200 | $28.894 | $5,778.80 |
| 500 | $27.879 | $13,939.50 |
| 1000 | $27.377 | $27,377.00 |
Inventory:5,618
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : FP50R12KT4G
-
Package/Case : Module
-
Brand : Infineon Technologies
-
Components Classification : IGBT Modules
-
Datesheet : FP50R12KT4G DataSheet (PDF)
Overview of FP50R12KT4G
In conclusion, the FP50R12KT4G stands as a pinnacle of innovation in the realm of IGBT modules, offering unparalleled performance, efficiency, and reliability. Ideal for high-power applications where precision and robustness are non-negotiable, this module exemplifies excellence in design and engineering, setting a new standard for industrial electronic components. Trust Infineon Technologies to deliver cutting-edge solutions that empower industries and elevate performance to new heights
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Series | EconoPIM™ 3 | Package | Tray |
| Product Status | Active | IGBT Type | Trench Field Stop |
| Configuration | Three Phase Inverter | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 50 A | Power - Max | 280 W |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 50A | Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 2.8 nF @ 25 V | Input | Standard |
| NTC Thermistor | Yes | Operating Temperature | -40°C ~ 150°C |
| Mounting Type | Chassis Mount | Package / Case | Module |
| Supplier Device Package | Module | Base Product Number | FP50R12 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
IRFP250NPBF
Voltage 200 Volts, Current 30 Amps
IRFP9240PBF
P-channel MOSFET,IRFP9240 12A 200V
AUIRFP4110
Trans MOSFET N-CH Si 100V 180A Automotive 3-Pin(3+Tab) TO-247AC Tube
BDW93CFP
Type: Power Darlington transistor with low voltage rating
IRFP4710PBF
N-channel power MOSFET with a 100V voltage rating and a maximum continuous drain current of 72A, packaged in a TO-247AC casing
IRFP450LC
Recommended MOSFET substitution: 844-IRFP450LCPBF
IRFP450APBF
N-channel MOSFET,IRFP450A 14A 500V
IRFP4868PBF
International Rectifier IRFP4868PBF N-channel MOSFET Transistor, 70 A, 300 V, 3-Pin TO-247AC
IRFP90N20DPBF
TO-247AC package ensures efficient heat dissipation for optimal performance
IRF630FP
IRF630FP Device
MJH6284G
100V 20A 160000mW Trans Darlington NPN 3-Pin TO-247 Tube
VMM90-09F
High Current Handling Capacity of 85A
CM600HA-28H
CM600HA-28H Trans IGBT Module
ECH8690-TL-H
Ready for same-day dispatch
HGT1S20N60C3S9A
The HGT1S20N60C3S9A is a high-performance N-Channel IGBT, capable of handling 45A at 600V
BC847B,235
Trans GP BJT NPN 45V 0.1A 250mW 3-Pin SOT-23 T/R
IRF9328PBF
HEXFET technology with 8.5nC charge
BC33725TA
BC33725TA, a TO-92 packaged NPN transistor, is engineered for general-purpose use, offering a voltage rating of 45V and a current rating of 0
MRF1570FNT1
TO-272-packaged silicon N-channel RF power MOSFET optimized for two-channel operation in the UHF band
BCR512E6327HTSA1
BCR512E6327HTSA1 is a SOT-23-3 packaged NPN silicon digital transistor with a voltage rating of 50 V and a current rating of 500 mA