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FF150R12YT3

N-Channel MODULE-24 with Insulated Gate Bipolar Transistor

Quantity Unit Price(USD) Ext. Price
1 $105.601 $105.60
200 $40.867 $8,173.40
500 $39.430 $19,715.00
1000 $38.720 $38,720.00

Inventory:5,764

*The price is for reference only.
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Overview of FF150R12YT3

One of the key highlights of the FF150R12YT3 module is its three-level Trench/Fieldstop IGBT design, which significantly enhances conduction and switching characteristics. This design feature allows for higher power density and superior thermal performance, enabling more compact and reliable system designs. Additionally, the integrated anti-parallel diode with low reverse recovery time further improves system efficiency by reducing switching losses

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tray Product Status Obsolete
Configuration 2 Independent Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 200 A Power - Max 625 W
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 150A Current - Collector Cutoff (Max) 1 mA
Input Capacitance (Cies) @ Vce 10.5 nF @ 25 V Input Standard
NTC Thermistor Yes Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount Package / Case Module
Supplier Device Package Module Base Product Number FF150R12Y

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