BC857B-7-F
Product description
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
20 | $0.021 | $0.42 |
200 | $0.018 | $3.60 |
600 | $0.018 | $10.80 |
3000 | $0.017 | $51.00 |
9000 | $0.016 | $144.00 |
21000 | $0.016 | $336.00 |
Inventory:8,374
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Part Number : BC857B-7-F
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Package/Case : SOT23-3
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Brand : DIODES
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Components Classification : Single Bipolar Transistors
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Datesheet : BC857B-7-F DataSheet (PDF)
The BC857B-7-F is a PNP general-purpose transistor that is commonly used for amplification and switching applications. It offers high current and low voltage capabilities, making it suitable for various electronic circuits and designs. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram to illustrate the connections and usage of the BC857B-7-F transistor for a visual representation. Note: For detailed technical specifications, please refer to the BC857B-7-F datasheet. Functionality The BC857B-7-F PNP transistor is designed to amplify and switch electronic signals. It provides reliable performance in various electronic circuits and applications. Usage Guide Q: What is the maximum current rating for the BC857B-7-F? Q: Is the BC857B-7-F suitable for audio amplification? For similar functionalities, consider these alternatives to the BC857B-7-F:Overview of BC857B-7-F
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The BC857B-7-F can typically handle currents up to a few hundred milliamps under appropriate operating conditions.
A: Yes, the BC857B-7-F can be used for small-signal and audio amplification due to its high current capability and low voltage operation.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | Transistor Polarity | PNP |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 45 V |
Collector- Base Voltage VCBO | 50 V | Emitter- Base Voltage VEBO | 5 V |
Maximum DC Collector Current | 100 mA | Pd - Power Dissipation | 300 mW |
Gain Bandwidth Product fT | 200 MHz | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Brand | onsemi / Fairchild |
DC Collector/Base Gain hfe Min | 220 at 2 mA, 5 V | Product Type | BJTs - Bipolar Transistors |
Subcategory | Transistors | Technology | Si |
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