FF150R12KS4
Infineon FF150R12KS4
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $74.088 | $74.09 |
Inventory:9,061
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : FF150R12KS4
-
Package/Case : Module
-
Brand : Infineon Technologies
-
Components Classification : IGBT Modules
-
Datesheet : FF150R12KS4 DataSheet (PDF)
Overview of FF150R12KS4
Moreover, the FF150R12KS4's design is a testament to its resilience and durability. Its low parasitic inductance ensures rapid switching speeds, elevating system performance to new heights. The module's compact yet rugged build reinforces its reliability, making it a valuable asset in challenging operational conditions. Safety features such as overcurrent and overtemperature protection are integrated seamlessly, guaranteeing a secure operating environment. With temperature and current sensors providing real-time monitoring of critical parameters, the FF150R12KS4 emerges as a comprehensive solution for industrial needs
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | C | Package | Tray |
Product Status | Active | Configuration | 2 Independent |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 225 A |
Power - Max | 1250 W | Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 150A |
Current - Collector Cutoff (Max) | 5 mA | Input Capacitance (Cies) @ Vce | 11 nF @ 25 V |
Input | Standard | NTC Thermistor | No |
Operating Temperature | -40°C ~ 125°C | Mounting Type | Chassis Mount |
Package / Case | Module | Supplier Device Package | Module |
Base Product Number | FF150R12K |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![FF450R06ME3](/files/uploads/product/s/80f65827d96d49a39edb7708a96ef9e5.webp)
FF450R06ME3
An IGBT Transistor Module that features an N-channel, rated for 600V and 550A, with a power dissipation of 1250mW
![FF1200R12IE5](/img/package/module.jpg)
FF1200R12IE5
1200V N-Channel Transistor IGBT Module with 1.2KA in Tray Packaging
![FF1800R17IP5](/img/package/module.jpg)
FF1800R17IP5
High-power insulated gate bipolar transistor (IGBT) modules
![ZXTP05120HFFTA](/img/package/sot233.jpg)
ZXTP05120HFFTA
This product belongs to the ZXTP05120HFF Series and is designed for medium power applications
![ZXTP07040DFFTA](/img/package/sot233.jpg)
ZXTP07040DFFTA
ZXTP07040DFFTA is a 40V PNP SOT-23F bipolar transistor with a power dissipation of 1
![ZXTN08400BFFTA](/img/package/sot23f.jpg)
ZXTN08400BFFTA
SOT23F packaged NPN transistor capable of handling 400V and 0.5A
![FFB2222A](/img/package/sc70.jpg)
FFB2222A
Transistors with multi-chip design for bipolar junction applications
![FF400R12KT3](/img/package/module.jpg)
FF400R12KT3
Fast switching N-channel IGBT with a current rating of 580 A and a voltage rating of 1200 V
![ZXMS6004FF](/img/package/sot23f.jpg)
ZXMS6004FF
This product, known as ZXMS6004FF, is an N-channel MOSFET with self-protection features and enhancement mode operation
![FF1400R17IP4](/img/product.png)
FF1400R17IP4
1700V N-Channel Trans IGBT Module with 1.4KA
![IPB60R299CP](/img/package/d2pak3.jpg)
IPB60R299CP
Detailed Information: This is the product IPB60R299CP
![IRF7413ZTRPBF](/img/package/soic8.jpg)
IRF7413ZTRPBF
SOIC-8 package N Channel MOSFET with 2.5W power dissipation at 13A current and 2.25V threshold voltage at 25uA
![IRFM120ATF](/img/package/sot223.jpg)
IRFM120ATF
Field-effect transistor with 100V capacity
![SIB441EDK-T1-GE3](/img/package/sc75.jpg)
SIB441EDK-T1-GE3
MOSFET SIB441EDK-T1-GE3 operates with a Vds of -12V and Vgs of 8V, enclosed in a PowerPAK SC-75 package
![RSR015P06HZGTL](/img/package/sot23.jpg)
RSR015P06HZGTL
Automotive Small Signal MOSFET with -60V Pch rating
![NXH450N65L4Q2F2SG](/img/product.png)
NXH450N65L4Q2F2SG
NPC Inverter IGBT Module with Three Levels
![2DA1971-7](/img/package/sot893.jpg)
2DA1971-7
00V PNP transistor SOT89 0.5A
![ZXMP6A17GQTA](/img/package/sot223.jpg)
ZXMP6A17GQTA
Trans MOSFET P-CH 60V 3A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
![BUK9508-55](/img/package/to220.jpg)
BUK9508-55
N-Channel Metal-oxide Semiconductor FET Power Field-Effect Transistor
![APT5010LVRG](/img/package/to264.jpg)
APT5010LVRG
Product APT5010LVRG, a MOSFET with a voltage rating of 500V and a resistance of 10 Ohms, presented in TO-264 package, meets RoHS compliance