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IRFM120ATF

Field-effect transistor with 100V capacity

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Overview of IRFM120ATF

The IRFM120ATF is a N-Channel MOSFET transistor designed for power switching applications. It features a high current rating and low on-resistance, making it suitable for use in various electronic circuits where efficient power management is required.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFM120ATF MOSFET for a visual representation.

Key Features

  • N-Channel MOSFET: Ideal for power switching applications.
  • High Current Rating: Capable of handling high currents for efficient power management.
  • Low On-Resistance: Provides minimal resistance to the flow of current, reducing power losses.
  • Fast Switching Speed: Offers quick switching times for responsive performance.
  • Enhanced Thermal Performance: Designed for improved heat dissipation in high-power applications.

Note: For detailed technical specifications, please refer to the IRFM120ATF datasheet.

Application

  • Power Supplies: Suitable for use in DC-DC converters, voltage regulators, and power management circuits.
  • Motor Control: Used in motor drive circuits for controlling the speed and direction of motors.
  • Inverters: Commonly employed in inverter circuits for converting DC power to AC power.

Functionality

The IRFM120ATF N-Channel MOSFET transistor is designed to efficiently switch and control power in electronic circuits. Its high current rating and low on-resistance make it a reliable component for various power management applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate pin to control the conduction of the MOSFET.
  • Drain-Source Voltage: Ensure that the Drain-Source voltage does not exceed the specified ratings to prevent damage to the device.
  • Heat Management: Consider proper heat sinking or thermal management techniques for optimal performance in high-power applications.

Frequently Asked Questions

Q: Is the IRFM120ATF suitable for high-frequency switching applications?
A: While the IRFM120ATF offers fast switching speed, it is recommended to consult the datasheet for specific frequency limitations.

Equivalent

For similar functionalities, consider these alternatives to the IRFM120ATF:

  • IRFZ44N: A widely used N-Channel MOSFET transistor with comparable specifications to the IRFM120ATF.
  • IRL540N: Another N-Channel MOSFET with similar characteristics suitable for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-223-4 / TO-261-4 Case Outline 318H-01
MSL Type 1 MSL Temp (°C) 250
Container Type REEL Container Qty. 4000
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 100
VGS Max (V) ±20 VGS(th) Max (V) 4
ID Max (A) 2.3 PD Max (W) 2.4
RDS(on) Max @ VGS = 10 V (mΩ) 200 Qg Typ @ VGS = 10 V (nC) 16
Ciss Typ (pF) 370 Pricing ($/Unit) $0.2799Sample

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