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DMN61D9UDW-7

Channel Dual MOSFET Array Transistor 60V 0.35A 6-Pin SOT-363 T/R

Quantity Unit Price(USD) Ext. Price
20 $0.027 $0.54
200 $0.022 $4.40
600 $0.019 $11.40
3000 $0.017 $51.00
9000 $0.016 $144.00
21000 $0.015 $315.00

Inventory:9,289

*The price is for reference only.
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Overview of DMN61D9UDW-7

With a transistor polarity of N-channel, the DMN61D9UDW-7 provides reliable performance in a range of electronic devices. The 60V drain source voltage allows for efficient power handling, while the 350mA continuous drain current ensures steady operation. The on resistance of 1.2ohm and Rds(on) test voltage of 5V make this MOSFET versatile for different voltage requirements

Key Features

Dual N-Channel MOSFET

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Ultra-Small Surface Mount Package

Lead Free By Design/RoHS Compliant (Note 3)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tape & Reel (TR) Product Status Obsolete
Technology MOSFET (Metal Oxide) Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 350mA
Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 28.5pF @ 30V
Power - Max 320mW Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 Base Product Number DMN61

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