• packageimg
packageimg

BSC066N06NSATMA1

Product BSC066N06NSATMA1 is a N-channel MOSFET capable of handling up to 60 volts and 15 amps

Quantity Unit Price(USD) Ext. Price
1 $0.992 $0.99
10 $0.840 $8.40
30 $0.755 $22.65
100 $0.661 $66.10
500 $0.619 $309.50
1000 $0.598 $598.00

Inventory:5,693

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for BSC066N06NSATMA1 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of BSC066N06NSATMA1

The BSC066N06NSATMA1 is a power MOSFET transistor designed for high-current applications in power electronics.This MOSFET features a low on-resistance and high current-handling capability,making it suitable for various power management systems.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • NC:No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSC066N06NSATMA1 MOSFET for visual representation.

Key Features

  • High Current Capability:The BSC066N06NSATMA1 can handle high continuous currents,making it suitable for power applications.
  • Low On-Resistance:This MOSFET has a low on-resistance to minimize power losses and increase efficiency in power circuits.
  • Fast Switching Speed:With its fast switching characteristics,this MOSFET enables rapid switching in power electronics systems.
  • Robust Design:The BSC066N06NSATMA1 is designed to operate reliably in demanding environments,ensuring long-term performance.
  • Wide Voltage Range:This MOSFET can operate within a wide voltage range,making it versatile for various power supply designs.

Note:For detailed technical specifications,please refer to the BSC066N06NSATMA1 datasheet.

Application

  • Power Supply Units:Ideal for use in power supply units for efficient power management and regulation.
  • Motor Control Systems:Suitable for motor control applications requiring high current handling and efficiency.
  • Inverter Circuits:Used in inverter circuits for converting DC power to AC power in electronic systems.

Functionality

The BSC066N06NSATMA1 is a power MOSFET transistor designed to control high currents with low on-resistance,offering efficient power management in various electronic systems.

Usage Guide

  • Gate Connection:Connect the gate(G)pin to the control signal for switching the MOSFET.
  • Source Connection:Connect the source(S)pin to the ground or common reference point in the circuit.
  • Drain Connection:Connect the drain(D)pin to the load or power output in the circuit.

Frequently Asked Questions

Q:What is the maximum current rating of the BSC066N06NSATMA1?
A:The BSC066N06NSATMA1 can handle a maximum continuous current of XXA.

Q:Can the BSC066N06NSATMA1 be used in high-temperature environments?
A:Yes,the BSC066N06NSATMA1 is designed to operate in high-temperature environments,providing reliable performance under elevated temperatures.

Equivalent

For similar functionalities,consider these alternatives to the BSC066N06NSATMA1:

  • IRF3205:A power MOSFET with comparable specifications and performance characteristics to the BSC066N06NSATMA1.
  • IXTP200N04T2:A power MOSFET transistor that offers similar current-handling capabilities and low on-resistance.
  • STP55NF06L:A power MOSFET alternative with high current capacity and fast switching speeds.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo MS, RoHS compliant, non dry
packageNameMarketing SuperSO8 5x6 msl 1
halogenFree yes customerInfo STANDARD
fgr U79 productClassification COM
productStatusInfo active and preferred hfgr A
packageName PG-TDSON-8 pbFree yes
moistureProtPack NON DRY orderingCode SP001067000
fourBlockPackageName PG-TDSON-8-6 rohsCompliant yes
opn BSC066N06NSATMA1 completelyPbFree no
sapMatnrSali SP001067000

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

IRLU8726PBF

IRLU8726PBF

Power Field-Effect Transistor IRLU8726PBF: An N-channel silicon MOSFET with 86A maximum drain current, 30V voltage rating, and 0
MRFE6VP61K25HR5

MRFE6VP61K25HR5

High-power amplifier for wireless infrastructu
IRFAE50

IRFAE50

Hermetically sealed power MOSFET in MIL-PRF-19500 packaging
BC557CZL1G

BC557CZL1G

PNP Bipolar Transistor, TO-92 Enclosure, 5.33mm Body Height, 2000 Components
MMUN2212LT1

MMUN2212LT1

Bipolar Transistors - Pre-Biased NPN BRT, 100mA 50V (Product MMUN2212LT1)
IXSN35N100U1

IXSN35N100U1

IGBT Transistors rated at 35 Amps and 1000V
IXTA02N450HV

IXTA02N450HV

High-Voltage Power MOSFET rated at 4500 volts and 200 milliamps
SI4483ADY-T1-GE3

SI4483ADY-T1-GE3

Package: Small Outline-8 (SO-8)
BC848B,215

BC848B,215

General Purpose SMT NPN Transistor from BC848 Series, Operating at 30 Volts and 100 Milliamps
IXZ318N50

IXZ318N50

Silicon N-Channel Metal-oxide Semiconductor FET