• packageimg
packageimg

DMN2065UW-7

SOT-323 packaged N-channel MOSFET with 20V voltage rating, 2.8A current rating, supplied on tape and reel

Quantity Unit Price(USD) Ext. Price
5 $0.123 $0.62
50 $0.100 $5.00
150 $0.090 $13.50
500 $0.081 $40.50
3000 $0.073 $219.00
6000 $0.069 $414.00

Inventory:8,245

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for DMN2065UW-7 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of DMN2065UW-7

The DMN2065UW-7 is an N-channel MOSFET transistor designed for use in power management applications. It features a low on-state resistance and high-speed switching capability, making it suitable for various switching and amplification tasks in electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for controlling the flow of current.
  • D: Drain terminal for the output connection.
  • S: Source terminal connected to ground or the common reference point.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMN2065UW-7 MOSFET for a visual representation.

Key Features

  • High-Speed Switching: Offers fast switching times for efficient operation.
  • Low On-State Resistance: Minimizes power losses and heat generation.
  • Enhanced Power Management: Ideal for power control and amplification tasks.
  • High Voltage Capability: Can handle high voltages for versatile applications.
  • Compact Design: Available in a small form factor suitable for space-constrained layouts.

Note: For detailed technical specifications, please refer to the DMN2065UW-7 datasheet.

Application

  • Power Switching Circuits: Suitable for use in power switching applications.
  • Motor Control: Ideal for motor control circuits requiring high-speed switching.
  • LED Lighting: Can be used in LED driver circuits for efficient power management.

Functionality

The DMN2065UW-7 N-channel MOSFET transistor enables efficient power management and high-speed switching in electronic circuits, making it a versatile component for various applications.

Usage Guide

  • Gate Connection: Connect the gate terminal (G) to the controlling signal.
  • Drain Connection: Connect the drain terminal (D) to the output load.
  • Source Connection: Connect the source terminal (S) to ground or the reference point.

Frequently Asked Questions

Q: What is the maximum voltage rating of the DMN2065UW-7?
A: The DMN2065UW-7 can handle voltages up to 60V.

Q: Is the DMN2065UW-7 suitable for high-frequency applications?
A: Yes, the DMN2065UW-7 offers high-speed switching capabilities, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the DMN2065UW-7:

  • IRF3205: An N-channel power MOSFET with comparable performance characteristics.
  • FDP8878: This MOSFET transistor offers similar power management capabilities in a different package.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-323-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 3.1 A Rds On - Drain-Source Resistance 56 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 350 mV
Qg - Gate Charge 5.4 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 700 mW
Channel Mode Enhancement Series DMN2065
Brand Diodes Incorporated Configuration Single
Fall Time 7.2 ns Product Type MOSFET
Rise Time 9.7 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 23.8 ns Typical Turn-On Delay Time 3.5 ns
Unit Weight 0.000212 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

FF1200R12KE3

FF1200R12KE3

Insulated Gate Bipolar Transistor, 1600A I(C), 1200V V(BR)CES, N-Channel
SIS903DN-T1-GE3

SIS903DN-T1-GE3

SIS903DN-T1-GE3 MOSFET with PowerPAK 1212-8 packaging
SI1443EDH-T1-GE3

SI1443EDH-T1-GE3

High Efficiency Power Semiconductor
DTA143EKAT146

DTA143EKAT146

DTA143EKAT146 is a PNP Digital Transistor designed for applications requiring a maximum current of -0
IRF740APBF

IRF740APBF

N-channel power MOSFET with a 400V voltage rating and 10A current capability
AT-42035G

AT-42035G

Silicon RF Bipolar Transistor AT-42035G
SI4497DY-T1-GE3

SI4497DY-T1-GE3

P-channel SOIC-8 MOSFET with a voltage rating of 30V and a maximum current of 36A, featuring a low on-resistance of 3.3mΩ at 10V and 20A
FMMT624TA

FMMT624TA

Diodes Inc FMMT624TA NPN Bipolar Transistor, 1 A, 125 V, 3-Pin SOT-23
MJ15021

MJ15021

Transistor 3-pin TO-3 Tray PNP BJT 250V 4A 150000mW
IRLR8729PBF

IRLR8729PBF

58 A, 30 V HEXFET