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IRF740APBF

N-channel power MOSFET with a 400V voltage rating and 10A current capability

Quantity Unit Price(USD) Ext. Price
1 $1.353 $1.35
10 $1.231 $12.31
30 $1.155 $34.65
100 $1.076 $107.60
500 $1.040 $520.00
1000 $1.025 $1,025.00

Inventory:9,754

*The price is for reference only.
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Overview of IRF740APBF

The IRF740APBF is a power MOSFET transistor designed for high-efficiency power applications. It features a low on-resistance and high switching speed, making it suitable for use in power management and motor control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF740APBF for a visual representation.

Key Features

  • High Efficiency: The IRF740APBF offers low on-resistance and high switching speed, resulting in efficient power management.
  • High Current Capability: With its robust design, this MOSFET can handle high current levels, making it suitable for motor control and power supply applications.
  • Low Gate-Source Threshold Voltage: The low gate-source threshold voltage enables efficient switching and control of the MOSFET.
  • Fast Switching Speed: The high switching speed allows for rapid transitions between on and off states, contributing to improved system performance.

Note: For detailed technical specifications, please refer to the IRF740APBF datasheet.

Application

  • Power Management Systems: Ideal for use in power supply units and DC-DC converter circuits.
  • Motor Control: Suitable for controlling DC motors and other high-current loads.
  • Inverter Systems: Used in inverter applications for converting DC power to AC power efficiently.

Functionality

The IRF740APBF is a power MOSFET transistor designed for high-efficiency power applications. It enables efficient switching and control of high currents, making it a versatile component in various power and motor control systems.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the driving circuit for controlling the MOSFET's switching operation.
  • Drain Connection: Connect the load or power supply to the drain (D) pin of the MOSFET.
  • Source Connection: Ground the source (S) pin of the MOSFET.

Frequently Asked Questions

Q: Can the IRF740APBF be used for high-frequency switching applications?
A: Yes, the IRF740APBF features a fast switching speed, making it suitable for high-frequency switching applications in power electronics.

Equivalent

For similar functionalities, consider these alternatives to the IRF740APBF:

  • IRF840APBF: This power MOSFET offers similar characteristics to the IRF740APBF with slight variations in voltage and current ratings.
  • IRF840A: Another alternative with comparable features from the same manufacturer, suitable for similar power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 400 V Id - Continuous Drain Current 10 A
Rds On - Drain-Source Resistance 550 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 36 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 125 W Channel Mode Enhancement
Series IRF Brand Vishay Semiconductors
Configuration Single Fall Time 22 ns
Product Type MOSFET Rise Time 35 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 24 ns
Typical Turn-On Delay Time 10 ns Part # Aliases IRF740APBF-BE3
Unit Weight 0.068784 oz

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